2020
DOI: 10.1039/d0tc03754k
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Thermal properties of metal-halide perovskites

Abstract: Aside from photovoltaics, metal-halide perovskite semiconductors have also emerged as attractive platform for LEDs and even lasers. For all of them, performance and operational stability are strongly influenced by thermally...

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Cited by 89 publications
(88 citation statements)
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References 201 publications
(278 reference statements)
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“…[ 10 ] As the activation energies for the thermal degradation of FAPbI 3 being higher than MAPbI 3 , FAPbI 3 is bestowed with higher resistance to thermal decomposition. [ 11 ] In addition, the ultralow thermal conductivity of MAPbI 3 will further limit the heat evacuation of perovskite, resulting in accelerated the decay of perovskite solar cells' (PSCs) lifetime. [ 12 ] In terms of humidity stability, both MAPbI 3 and FAPbI 3 could chemically decompose into lead iodide (PbI 2 ) under high moisture condition.…”
Section: Introductionmentioning
confidence: 99%
“…[ 10 ] As the activation energies for the thermal degradation of FAPbI 3 being higher than MAPbI 3 , FAPbI 3 is bestowed with higher resistance to thermal decomposition. [ 11 ] In addition, the ultralow thermal conductivity of MAPbI 3 will further limit the heat evacuation of perovskite, resulting in accelerated the decay of perovskite solar cells' (PSCs) lifetime. [ 12 ] In terms of humidity stability, both MAPbI 3 and FAPbI 3 could chemically decompose into lead iodide (PbI 2 ) under high moisture condition.…”
Section: Introductionmentioning
confidence: 99%
“…When compared with that of Si, hot dense electron‐hole plasma induced in the perovskite material can recombine three orders of magnitude faster, thus resulting in a much stronger localization within the region where carriers exchange energy with ions. Thermal capacity of Si (700 J kg −1 K −1 [ 46 ] ) is higher that of CsPbBr 3 (280 J kg −1 K −1 [ 30 ] ), which means that the perovskite requires less absorbed energy to be heated equally to Si. Finally, CsPbBr 3 possesses a much lower thermal conductivity (κ = 0.4 W m −1 K −1 [ 4 ] ) than that of Si (κ = 130 W m −1 K −1 [ 46 ] ), which leads to stronger heat localization in the perovskite after its lattice sub‐system heated by carriers.…”
Section: Resultsmentioning
confidence: 99%
“…Such ultrafast thermal processes lead to defect generation and development of surface instabilities, as laser ablation typically leaves damaged material with random surface morphology and heat‐affected optical and optoelectronic properties. [ 29 ] In turn, halide perovskites with their extremely low thermal conductivity (κ 10 −3 W cm −1 K −1 [ 30 ] ) and high defect tolerance represent semiconductor materials in which the above mentioned thermal issues arising in the process of direct laser nanostructuring can be successfully overcame. Indeed, direct laser processing of halide perovskites was recently employed for solar cell scribing, fabrication of functional micro‐optics (diffraction gratings, Fresnel lenses, etc.…”
Section: Introductionmentioning
confidence: 99%
“…The higher thermal expansion coefficient of FAPbI3 over the substrate and the temperature gradient between the bottom and top surface of the FAPbI3 layer upon annealing will induce large residual strain. [67,68] The faster…”
Section: Controlled Crystallizationmentioning
confidence: 99%