2013
DOI: 10.1007/s40145-013-0059-8
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Thermal properties of AlN polycrystals obtained by pulse plasma sintering method

Abstract: Aluminum nitride (AlN) polycrystals were prepared by pulse plasma sintering (PPS) technique. The starting AlN powder mixtures were composed with 3.0 wt%, 5.0 wt% and 10 wt% of yttrium oxide (Y 2 O 3 ), respectively. Relative density of each polycrystal was measured by hydrostatic method and evaluated higher than 97%. X-ray diffraction (XRD) method was used for phase examination of the samples after heat treatment. Microstructure examination supported by computer-aided analysis was performed by scanning electro… Show more

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Cited by 15 publications
(7 citation statements)
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“…The diffraction peaks of -SiC and graphite phases in the composite can be detected. Besides, AlYO 3 phase is also found, which was probably derived from the eutectic reaction of Al 2 O 3 and Y 2 O 3 to facilitate the sintering process [34,35]. Significant differences are shown in two principle directions of the composite.…”
Section: Phase Composition and Microstructurementioning
confidence: 97%
“…The diffraction peaks of -SiC and graphite phases in the composite can be detected. Besides, AlYO 3 phase is also found, which was probably derived from the eutectic reaction of Al 2 O 3 and Y 2 O 3 to facilitate the sintering process [34,35]. Significant differences are shown in two principle directions of the composite.…”
Section: Phase Composition and Microstructurementioning
confidence: 97%
“…Beryllium oxide ceramics with high thermal conductivity (250 W•m −1 •K −1 ) and good shock resistance, also occupy a priority status in the heat dissipation substrate. Although high purity beryllium oxide ceramics are very safe, the powders of beryllium oxide are highly toxic, which hampers their further development [3,4]. It is of great significance to develop the ceramic substrate material with excellent comprehensive performance.…”
Section: Introduction mentioning
confidence: 99%
“…AlN, as an important III-V semiconductor material, has attracted great attention because of its high thermal conductivity, high electrical resistance, wide band gap, low dielectric constant, and low thermal expansion coefficient [1,2]. Based on these excellent properties, it has good application prospects in terms of electronic substrates, packaging materials, heat sinks and field-emission devices [3][4][5][6]. Recently, spherical AlN particles with micrometer size have shown significant promise for applications in raw materials for electronic substrates and fillers for packaging materials owing to their good fluidity and dispersity [7,8].…”
Section: Introductionmentioning
confidence: 99%