Thermal process of iron silicides prepared by Magnetron sputtering

Zhang, J.; Quan, Xie; Liang, Yan; Zeng, Wu; Xiao, Qingquan; Chen, Q.; Ma, D.L.; Wang, Y.; Yamada, Koji; Luo, Jiaolian

doi:10.1016/j.phpro.2011.01.019

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2015

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“…In this paper, we have studied annealing time influence on optical characteristic of the beta-FeSi 2 thin film through the X-ray diffraction (XRD), optical digital microscope (ODM), spectrophotometer, the scanning electron microscope (SEM), and the crystallization calculation, and believed that when annealing temperature is 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi 2 thin film. Especially, this research has been on the basis of the former research conclusion drew by both J. M. Zhang [3][4][5] and X. Zheng [6] in our team.…”

Section: Introductionmentioning

confidence: 99%

Annealing Time Influence on Optical Characteristic of Beta-FeSi<sub>2</sub> Thin Film

Xiong

Kang

Chen

et al. 2015

AMR

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In this paper, we have prepared the beta-FeSi2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi2 thin film. More the thickness of the beta-FeSi2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.

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Section: Introductionmentioning

confidence: 99%