Thermal performance of a dual 1.2 kV, 400 a silicon-carbide MOSFET power module

Boteler, Lauren; Urciuoli, Damian; Ovrebo, Gregory K.; Ibitayo, Dimeji; Green, Ronald

doi:10.1109/stherm.2010.5444297

Cited by 13 publications

(9 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, for the modeling of Fig. 18(b) without the current coupling effect, ΔV LS1 , ΔV LS2 , ΔV LS3 and ΔV LS4 are determined as (14) and the current unbalances among the paralleled dies are as (15).…”

Section: A Dbc Layout Mismatch In Multichip Power Modulesmentioning

confidence: 99%

“…Compared with Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs), SiC MOSFETs have no tail current due to their unipolar structure and thus allowing reduced switching losses and higher switching frequency [5], [7]- [10]. However, the lower current rating of SiC MOSFETs often requires paralleled connection of discrete SiC MOSFETs [11]- [13] or using multichip power module [14]- [22].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Munk‐Nielsen

Wang

et al. 2016

IEEE Trans. Power Electron.

216

View full text Add to dashboard Cite

This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed to reduce such a coupling effect. Lastly, simulations and experimental tests are carried out to validate the analysis and effectiveness of the developed layout.

show abstract

Section: A Dbc Layout Mismatch In Multichip Power Modulesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Munk‐Nielsen

Wang

et al. 2016

IEEE Trans. Power Electron.

216

View full text Add to dashboard Cite

show abstract

“…Simulations were conducted for flow rates ranging from 1.9 to 11.4 liters per minute (lpm) to map fluid velocities at selected heat sink cross sections. Results over the range showed good flow uniformity over the active cooling areas [5], [6]. Because the heat sink is symmetric along both its length and width, fluid flow in either direction through the ports results in highly symmetric thermal performance.…”

Section: Module Design and Fabricationmentioning

confidence: 99%

Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Urciuoli

Green

Lelis

et al. 2010

2010 IEEE Energy Conversion Congress and Exposition

Self Cite

View full text Add to dashboard Cite

A dual 1200 V, 400 A power module was built in a half-bridge configuration using 16 silicon-carbide (SiC) 0.56 cm 2 DMOSFET die and 12 SiC 0.48 cm 2 JBS diode die. The module included high temperature custom packaging and an integrated liquid cooled heat sink while conforming to the footprint and pinout of a commercial dual IGBT package. Die encapsulant was not used, to allow data collection by infrared thermal imaging. The module was DC tested at currents up to 400 A and coolant temperatures up to 100 ˚C. Switching was evaluated in a boost converter at load power levels up to 25 kW and at frequencies up to 30 kHz with coolant temperatures up to 80 ˚C. Acceptable current sharing between MOSFET die was observed over the switching frequency and coolant temperature ranges. Package thermal resistances and MOSFET and diode power losses were characterized. Results were compared to those simulated for a 400 A IGBT module.

show abstract

“…Some alternative materials such as silicon carbide (SiC) wide band gap semiconductors are currently being studied by researchers [1][2]. Therefore, it is necessary to develop efficient cooling technologies that can handle these higher power densities [3].…”

Section: Introductionmentioning

confidence: 99%

Design of Integrated Liquid Cooling System for An All 650 V, 116 A Silicon Carbide MOSFET Power Module

Feng¹,

Hong²,

Guo³

et al. 2021

Preprint

View full text Add to dashboard Cite

In this paper, the thermal performance of an all SiC 650 V, 116 A MOSFET power module has been studied by numerical simulation. Aiming at the heat dissipation problem of the SiC power devices in the inverter, three integrated liquid cooling heat sinks with different channel structures were designed. Results showed that compared with the other two cooling structures, the serpentine flow channel cooling structure can provide the best cooling effect. For the serpentine flow channel cooling structure, the heat source maximum temperature increases as the fin thickness increases, and the pressure drop decreases as the fin thickness increase when the coolant flow rate is constant. The improved heat sink has been numerical tested up to 110 A showing the device maximum temperature of 39.8°C, which can well meet the design requirements.

show abstract

Thermal performance of a dual 1.2 kV, 400 a silicon-carbide MOSFET power module

Cited by 13 publications

References 3 publications

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Design of Integrated Liquid Cooling System for An All 650 V, 116 A Silicon Carbide MOSFET Power Module

Contact Info

Product

Resources

About