Thermal performance and limitations of silicon–substrate packaged GaAs laser arrays

An appreciation of usability of the finite element technique for the thermal analysis of stripe-geometry diode lasers is carried out in the present work. Thye technique appears to be very exact and surprisingly speed using even a standard IBM PC/AT microcomputer.As an example, a finite-element thermal analysis of the diffused-stripe doubleheterostructure GaAs/(AIGa)As diode laser is carried out. A system of isotherms obtained for the above laser enables us to discuss the heat spreading process within its structure and to compare relative contributions of all heat sources.An operation of diode lasers (DLS) strongly depends on their thermal properties because all electrical and optical processes taking place inside a DL crystal are temperature-dependent. Consequently all DL operation characteristics are sensitive to a temperature distribution within and around a DL active area. Therefore thermal properties of diode lasers are of prime importance.Up to now experimental methods determining temperature profiles within the DL crystal with a required space resolution and a necessary temperature exactness have not been found. Therefore theoretical thermal modelling of diode lasers remains the most useful tool for such an application.Most of thermal models [1-7] of stripe-geometry diode lasers are based on the classical semi-analytical thermal analysis of the diffused-stripe diode lasers reported by Joyce and Dixon [8]. There are also known fully analytical thermal DL models for a steady state cw operation [9, 10], a transient-state pulse operation [11] and self-cooling of the DL crystal between the current pulses [12]. John grdey & Sons, Limi~ ChichesterKiad6, Budapest

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“…In this method proposed by Laff et al [38], the effective width SEF of a heat flux flowing into the heat sink is calculated in the following way…”

Section: Heat-sinking Analysismentioning

confidence: 99%

An appreciation of usability of the finite element method for the thermal analysis of stripe-geometry diode lasers

Sarzała

Nakwaski

1990

Journal of Thermal Analysis

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“…Lafif et al [30] discuss how thermoelectric coolers are used in optical feedback loops to control average optical output power. The advantage of temperature control is that it is a negative feedback technique.…”

Section: Thermal Interfacementioning

confidence: 99%

(GaAl)As Laser Requirements for Local Attached Data Link Applications

Crow

1979

IBM J. Res. & Dev.

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The characteristics of (GaAl)As double heterostructure stripe contact injection lasers as they relate to applications in fiber optic data transmission systems are reviewed. Tlie laser characteristics are treated as optical, electrical, thermal, and mechanical interfaces to the system in order to emphasize the necessity of designing devices as a functional part of a system or subsystem. It is concluded that the laser is generally well suited as an optical source in a card-mountahle hybrid module transmitter for data links up to a few km and -100 Mbitls data rates. Areas requiring further development include lowering of the laser threshold current, improving the modal stability, packaging the laser with electronics and fiber optic transmission lines, and improving the laser lifetime under varying ambient temperature conditions.

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“…The bonding medium between the back side substrate metals and the copper heat sink is not shown. Detailed experimental results addressing the bonding of lasers, optical performance, and thermal characterisr of the source package and potential applications will be presented elsewhere (14)(15)(16)(17)(18)(19).…”

Section: S I L I C O N S U B S T R a T E P A C K A G E 1645mentioning

confidence: 99%

“…At this point the individual 6 m m square substrate is ready for bonding of the lasers to the silicon. results addressing the bonding of lasers, optical performance, and thermal characterisr of the source package and potential applications will be presented elsewhere (14)(15)(16)(17)(18)(19).…”

Section: Processing Stepsmentioning

confidence: 99%

Fabrication Processes for a Silicon Substrate Package or Integrated Gallium Arsenide Laser Arrays

Brady

1978

J. Electrochem. Soc.

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Single crystal silicon substrate chips with preferentially etched V-groove structures have been fabricated to accurately hold optical fibers for efficient output coupling of integrated gallium arsenide laser arrays. In addition, the substrate contains individually addressable drive electrodes electrically isolated by reversed biased p,n junctions. This paper discusses the required fabrication and processing techniques necessary to achieve the silicon package utilizing batch-processing technology found in the manufacture of microelectronic devices.

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Thermal performance and limitations of silicon–substrate packaged GaAs laser arrays

Cited by 38 publications

References 9 publications

An appreciation of usability of the finite element method for the thermal analysis of stripe-geometry diode lasers

An appreciation of usability of the finite element method for the thermal analysis of stripe-geometry diode lasers

(GaAl)As Laser Requirements for Local Attached Data Link Applications

Fabrication Processes for a Silicon Substrate Package or Integrated Gallium Arsenide Laser Arrays

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