2005
DOI: 10.1063/1.1853519
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Thermal oxidation of porous silicon: Study on structure

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Cited by 101 publications
(57 citation statements)
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“…The presence of these terminal SiOH groups in CoxPSi, can partly explain the results shown in figure 7, as Si-OH can easily react with APTS molecules according to a partial or total condensation of ethoxy groups [15]. Such a mechanism is less obvious for the terminal SiO 2 present in ToxPSi [20]. These results on surface chemical composition are directly relevant to the further biofunctionalization ( figure 8(c)): the two characteristic protein bands at 1535 and 1653 cm -1 , which are related to the N-H and C=O bonds, respectively [28,29], are stronger in CoxPSi than in ToxPSi.…”
Section: Resultsmentioning
confidence: 76%
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“…The presence of these terminal SiOH groups in CoxPSi, can partly explain the results shown in figure 7, as Si-OH can easily react with APTS molecules according to a partial or total condensation of ethoxy groups [15]. Such a mechanism is less obvious for the terminal SiO 2 present in ToxPSi [20]. These results on surface chemical composition are directly relevant to the further biofunctionalization ( figure 8(c)): the two characteristic protein bands at 1535 and 1653 cm -1 , which are related to the N-H and C=O bonds, respectively [28,29], are stronger in CoxPSi than in ToxPSi.…”
Section: Resultsmentioning
confidence: 76%
“…These results can be explained by the presence of surface SiOH groups in CoxPSi, which can easily react with APTS molecules and induce derivatization according to a partial or total condensation of ethoxy groups [15]. Such a mechanism is not obvious for the terminal SiO 2 present in ToxPSi [20]. Thus, since the APTS molecule functions as a cross-linker between the PSi matrix and biomolecules, biofunctionalization with immunoglobulin is expected to be higher on CoxPSi than on ToxPSi.…”
Section: Resultsmentioning
confidence: 97%
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“…4) which can be attributed to oxide stretching vibrations (νSiO modes). 30,31 The oxide stretching vibrations for H-PSi wafers before the experiments was very weak, but after the reaction, an obvious peak appeared at 950-1250 cm −1 . This change demonstrates that the oxidation of porous Si took place.…”
Section: Resultsmentioning
confidence: 99%
“…Indeed, previous atomic force microscopy characterization of oxidized PSi shows that the oxide layer tends to form on the needle-like peaks on the PSi surface, rather than in the pores. [52] An additional consideration is that the low pore density might allow an oxide layer to coat the entire surface, sealing off the tops of the pores. [53] However, after the LPSi is cooled, the induced stress on this layer could fracture it, thus exposing the pure silicon pores.…”
Section: Resultsmentioning
confidence: 99%