Thermal optimization of GaN-on-Si HEMTs with plastic package

Liu, R.; Schreurs, Dominique; Raedt, W. De; Vanaverbeke, Frederik; Mertens, R.; Wolf, Ingrid De

doi:10.1016/j.microrel.2011.06.033

Cited by 8 publications

(4 citation statements)

References 5 publications

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“…Two types of commercial grade alumina fillers with different morphologies, as shown in Figure 1, were used: plate-like alumina filler (trade name: C150-T, D 50 $ 8-13 um, density: 3.94 g/cm 3 ) supplied by Kodell co Ltd and spherical alumina filler DAS-30 (D 50 $ 30 um, density: 3.85 g/cm 3 ) supplied by Denka co Ltd. Polysiloxane resins with low viscosity were selected: TSE3070A (viscosity: 0.82 Pa s) and TSE3070B (viscosity:0.78 Pa s) supplied by Momentive performance materials.…”

Section: Methodsmentioning

confidence: 99%

“…Efficient thermal dissipation is a key issue for electronic devices such as high power LEDs and GaN-based packaged systems for high power applications in order to achieve optimum performance and maintain reliability. [1][2][3] Various methods are applied to facilitate heat dissipation, such as the use of a heat pipe or heat sinks, but the most widely used method is the application of thermal interface materials (TIMs). [4][5][6][7][8] Various studies regarding TIM have been performed by mixing resins with fillers to obtain a composite material which has high thermal conductivity, low coefficient of thermal expansion and good workability while being cost effective.…”

Section: Introductionmentioning

confidence: 99%

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Electric field assembled anisotropic alumina composite for thermal dissipation applications

Yoo

Seo

Kim

et al. 2012

Journal of Composite Materials

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A composite material with anisotropic microstructure was fabricated by DC electric field. Alumina was used as filler for thermal conductivity and polysiloxane resin was used as matrix. According to the alumina morphology and loading amount, various anisotropic microstructures were assembled. The thermal properties of the composite material were investigated parallel to the direction of the applied electric field accordingly. For plate-like alumina with 20 vol% loading, a thermal conductivity of 0.44 W/mK was achieved. With spherically shaped alumina, with an equal loading of 20 vol%, a higher thermal conductivity of 0.46 W/mK was achieved. The increase in the thermal conductivity of the fabricated alumina composites with anisotropic microstructure was attributed to increased filler-to-filler connectivity.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electric field assembled anisotropic alumina composite for thermal dissipation applications

Yoo

Seo

Kim

et al. 2012

Journal of Composite Materials

View full text Add to dashboard Cite

show abstract

“…In recent years, rapid industrialization and device development have led to the need for portability, lightweight, and high functionality in many areas, such as automotive components, PCs, home appliances, mobile phones, portable devices, and light-emitting diodes. 1,2) As devices become more densely packed, the heat density inside electronic devices increases. If the heat is not effectively dissipated, it can cause many problems, such as reduced durability, malfunction, explosion risk, reduced lifespan, and discoloration of the device.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Thermal Conductivity in Epoxy Composites with Functionalized Boron Nitride Nanosheets

Kim,

Im,

Kim

2023

Korean. J. Mater. Res.

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This comprehensive study delves into the intricate process of exfoliating and functionalizing boron nitride nanosheets (BNNSs) extracted from hexagonal boron nitride (h-BN), and meticulously explores their potential application within epoxy composites. The extensive research methodology encompasses a sequence of treatments involving hydrothermal and sonication processes aimed at augmenting the dispersion of BNNSs in solvents. Leveraging advanced analytical techniques such as Raman spectroscopy, X-ray diffraction, and FTIR spectroscopy, the study rigorously analyzes a spectrum of changes in the BNNS's properties, including layer count variations, interlayer interactions, crystal structure modifications, and the introduction of functional groups. The research also rigorously evaluates the impact of integrating BNNSs, specifically glycidyl methacrylate (GMA)-functionalized BNNSs, on the thermal conductivity of epoxy composites. The conclusive findings exhibit notable enhancements in thermal properties, predominantly attributed to the enhanced dispersion of fillers and enhanced interactions within the epoxy matrix. This pioneering work illuminates the wide potential of functionalized BNNSs for significantly enhancing the thermal conductivity of epoxy composites, paving the way for advanced materials engineering and practical applications.

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“…Suitably formed joints should decrease the junction temperature, minimize self-heating effects and extend the lifetime and reliability of the power devices. In this way, developed assembly methods could improve GaN-on-Si HEMTs performance (Bajwa et al , 2015; Cheng and Chou, 2013; Liu et al , 2011).…”

Section: Introductionmentioning

confidence: 99%

Development of assembly techniques for connection of AlGaN/GaN/Si chips to DBC substrate

Kisiel

Guziewicz

Taube

et al. 2020

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Purpose This paper aims to investigate the sintering and solid liquid interdiffusion bonding (SLID) techniques to attach AlGaN/GaN-on-Si chips to direct bond copper (DBC) substrate. The influence of metal layers deposited on the backside of AlGaN/GaN-on-Si dies on the assembly process is also investigated. Design/methodology/approach The authors assumed the value of the shear strength to be a basic parameter for evaluation of mechanical properties. Additionally, the surface condition after shearing was assessed by SEM photographs and the shear surface was studied by X-ray diffraction method. The SLID requires Sn-plated DBC substrate and can be carried out at temperature slightly higher than 250°C and pressure reduced to 4 MPa, while the sintering requires process temperature of 350°C and the pressure at least 7.5 MPa. Findings Ag-, Au-backside covered high electron mobility transistor (HEMT) chips can be assembled on Sn-plated DBC substrates by SLID technology. In case of sintering technology, Cu- or Ag-backside covered HEMT chips can be assembled on Ag- or Ni/Au-plated DBC substrates. The SLID process can be realized at lower temperature and decreased pressure than sintering process. Research limitations/implications For SLID technology, the adhesion between Cu-backside covered HEMT die and DBC with Sn layer loses its operational properties after short-term ageing in air at temperature of 300°C. Originality/value In the SLID process, Sn-Cu and Sn-Ag intermetallic compounds and alloys are responsible for creation of the joint between Sn-plated DBC and micropowder Ag layer, while the sintered joint between the chip and Ag-based micropowder is formed in diffusion process.

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Thermal optimization of GaN-on-Si HEMTs with plastic package

Cited by 8 publications

References 5 publications

Electric field assembled anisotropic alumina composite for thermal dissipation applications

Electric field assembled anisotropic alumina composite for thermal dissipation applications

Enhancing Thermal Conductivity in Epoxy Composites with Functionalized Boron Nitride Nanosheets

Development of assembly techniques for connection of AlGaN/GaN/Si chips to DBC substrate

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