2008 9th International Conference on Solid-State and Integrated-Circuit Technology 2008
DOI: 10.1109/icsict.2008.4734584
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Thermal noise performance in recent CMOS technologies

Abstract: This paper reviews the measurement and modeling issues of the channel thermal noise in MOSFETs as a result of the aggressive reduction of the channel length into the sub-l00 nm regimes. It also shows the noise performance of devices in 65 nm CMOS technology.

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Cited by 4 publications
(1 citation statement)
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“…) where 𝑖=2,3,4, 𝛾 is the channel thermal noise coefficient with a value of 2~4 for 65nm CMOS process [32]. Except the above 5 noise contributors, 𝐼 𝑁𝑒𝑞 represents the equivalent current noise from the bottom half part of the full circuit.…”
Section: Noise Analysis Of the Complementary Current Mode Filtermentioning
confidence: 99%
“…) where 𝑖=2,3,4, 𝛾 is the channel thermal noise coefficient with a value of 2~4 for 65nm CMOS process [32]. Except the above 5 noise contributors, 𝐼 𝑁𝑒𝑞 represents the equivalent current noise from the bottom half part of the full circuit.…”
Section: Noise Analysis Of the Complementary Current Mode Filtermentioning
confidence: 99%