Thermal Nitridation of Si and SiO/sub 2/ for VLSI

Moslehi, Mehrdad M.; Saraswat, Krishna C.

doi:10.1109/jssc.1985.1052274

Cited by 41 publications

(17 citation statements)

References 45 publications

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“…1 Overestimated, as k AIM (ND 3 ) is expected to be overestimated. 2 Underestimated, see footnote 1. Normal modes most important for the hydrogen transfer within a silicon dimer.…”

Section: Intra-dimer Pathwaymentioning

confidence: 99%

“…Silicon (100)-(2 x 1) surface is known for its high chemical reactivity resulting from the presence of dangling bonds that leads to formation of Si dimers on the surface [1]. The interaction of ammonia with silicon surfaces has been studied experimentally at various temperatures [2][3][4][5][6][7][8][9]. In particular, Avouris and coworkers studied extensively the (100) surface [3] using scanning tunneling microscopy (STM), X-ray (XPS) and ultraviolet photoemission (UPS) spectroscopies.…”

Section: Introductionmentioning

confidence: 99%

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Model, First-Principle Calculation of Ammonia Dissociation on Si(100) Surface. Importance of Proton Tunneling

Smedarchina

Zgierski

2003

IJMS

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The dissociation of an ammonia molecule on a cluster of Si atoms simulating the 100 silicon crystal structure with two Si dimers has been investigated by means of the DFT and an approximate instanton methods. The model corresponds to the low coverage limit of the surface. Absolute rate constants of two different dissociation paths are evaluated together with deuterium isotope effects. It is demonstrated that, even at room temperatures, the process is dominated by tunneling and that dissociation to a silicon atom of the adjacent dimer, rather than a silicon within the same dimer, is the prevailing mechanism. This leads to creation of a metastable structure which will slowly decay through a two-step hydrogen atom migration towards the absolute minimum on the potential energy surface corresponding to the NH2 group and the hydrogen atom residing in the same dimer

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“…1 Overestimated, as k AIM (ND 3 ) is expected to be overestimated. 2 Underestimated, see footnote 1. Normal modes most important for the hydrogen transfer within a silicon dimer.…”

Section: Intra-dimer Pathwaymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Model, First-Principle Calculation of Ammonia Dissociation on Si(100) Surface. Importance of Proton Tunneling

Smedarchina

Zgierski

2003

IJMS

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“…3. The N surface atom concentration = r iexpi -d [2] (N) is converted from d by N NISiN) X5,,, sin = N5131d [4] where 'si)SiN) and ')5jN) are the intensities of Si 2p and N is, respectively, for Si3N4 film (200 A) on Si(100), d is the sili-where NN)SN) is the N atom concentration (5.5 )< i0 cm3) con nitride film thickness, XS,N(SI) and X5,N(N) are the escape for Si3N4. scopy (XPS) as follows: Fig.…”

Section: Methodsmentioning

confidence: 99%

Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures

Watanabe

Ichikawa

Sakuraba

et al. 1998

J. Electrochem. Soc.

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Atomic-order nitridation of Si(100) in an NH3 environment (124-1400 Pa) at 300-650°C has been investigated using an ultraclean low pressure hot-wall reactor system. At 500°C or higher, the N atom concentration (nN) initially increases and tends to saturate to a certain value (d 5 A, N -ABSTRACT Soft baking, one of the key steps in photoresist processing, is modeled theoretically. The relevant mechanisms involved in this step and the relative significance of each mechanism are discussed, and an analytical expression for the temporal variation of film thickness is derived. The applicability of the model derived is justified by fitting the experimental data for JSR 1X150 and Shipley SPR51OLA photoresists reported in the literature. We show that the rate of transfer of solvent is controlled by its convective transport near the film-gas interface.

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“…The Si 3 N 4 film formed on the silicon surface as a rule is amorphous [14][15][16][17][18]. However, at the initial stage of this process, the (8 × 8) structure is formed.…”

Section: Kinetics and Thermodynamics Of G-sin Formation On The Si (11mentioning

confidence: 99%

Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride

Мансуров¹,

Galitsyn²,

Малин³

et al. 2019

2D Materials

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A systematic study of kinetics and thermodynamics of Si (111) surface nitridation under ammonia exposure is presented. The appeared silicon nitride (8 × 8) structure is found to be a metastable phase. Experimental evidences of graphenelike nature of the silicon nitride (8 × 8) structure are presented. Interlayer spacings in the (SiN) 2 (AlN) 4 structure on the Si (111) surface are found equal to 3.3 Å in SiN and 2.86 Å in AlN. These interlayer spacings correspond to weak van der Waals interaction between layers. In contrast to the widely accepted model of a surface structure (8 × 8) as monolayer of β-Si 3 N 4 on Si (111) surface, we propose a new graphene-like Si 3 N 4 (g-Si 3 N 3 and/or g-Si 3 N 4) model for the (8 × 8) structure. It is revealed that the deposition of Al atoms on top of a highly ordered (8 × 8) structure results in graphene-like AlN (g-AlN) layers formation. The g-AlN lattice constant of 3.08 Å is found in a good agreement with the ab initio calculations. A transformation of the g-AlN to the bulk-like wurtzite AlN is analyzed.

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Thermal Nitridation of Si and SiO/sub 2/ for VLSI

Cited by 41 publications

References 45 publications

Model, First-Principle Calculation of Ammonia Dissociation on Si(100) Surface. Importance of Proton Tunneling

Model, First-Principle Calculation of Ammonia Dissociation on Si(100) Surface. Importance of Proton Tunneling

Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures

Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride

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