Thermal Metrology of Silicon Microstructures Using Raman Spectroscopy

Abstract

Thermal metrology of an electrically active silicon heated atomic force microscope cantilever and doped polysilicon microbeams was performed using Raman spectroscopy. The temperature dependence of the Stokes Raman peak location and the Stokes to anti-Stokes intensity ratio calibrated the measurements, and it was possible to assess both temperature and thermal stress behavior with resolution near 1 m. The devices can exceed 400 C with the required power depending upon thermal boundary conditions. Comparing the Stokes shift method to the intensity ratio technique, non-negligible errors in devices with mechanically fixed boundary conditions compared to freely standing structures arise due to thermally induced stress. Experimental values were compared with a finite element model, and were within 9% of the thermal response and 5% of the electrical response across the entire range measured.

Microcantilever hotplates: Design, fabrication, and characterization

“…However, types C, E, and F can exceed 1000 • C at power <P crit where device operation is relatively safe. At low power, maximum local temperature of each type changes linearly with power dissipation but nonlinearity is observed at high power possibly due to higher uncertainty of the Raman measurement [31], which is ±10 • C at the highest temperatures measured here.…”

“…Local temperature of these cantilevers can be measured by intensity ratio of Stokes and Anti-Stokes peak, line width (full width at half maximum, FWHM) of Stokes peak, or the shift of Stokes peak. The stokes peak shift method was used in this work since Stokes peak shows linear shift over a wide temperature range and does not require detailed calibrations [31]. Fig.…”

Nanotopographical imaging using a heated atomic force microscope cantilever probe

“…A commercial Raman spectroscopy [17] system, Renishaw In Via Raman Microscope with 180 • backscattering geometry was used to measure heater temperatures of the cantilevers that were suspended in the ambient for various power dissipations. We have previously published a description of the method used to calibrate the cantilever thermistor using Raman spectroscopy [14,18] and do not review the details here.…”

“…(3) The cantilever heater temperatures were determined by substituting the measured resistance of the cantilever whose tip touched the sample surface into the characteristic function, generated in (2), of the cantilever electrical resistance. With this method, it is possible to calibrate the cantilever temperature to within 5 • C over the temperature range of interest [14,18].…”

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

“…could be used to distinct between emission or scattering originated within a sample or its substrate, and to measure localized temperatures. In addition, it is possible to measure optical properties of individual nano-objects using, for example, near-field optics in fluorescence or Raman thermometry [58,59]. There are many variation of how the electrical heating and sensing elements can be assembled in the experiment.…”