Abstract:As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and hightemperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this challenge, this study proposes a multi-objective optimization design method for parasitic inductance (L), thermal strain (ε), and thermal resistance (R) of SiC MOSFETs wit… Show more
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