Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure

Abstract

Self-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The IDS difference between the pulse and DC bias measurement was about 21% at high bias VDS due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately ~22 °C in a HEMT operating at ~10.6 Wmm−1 after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.

Tensile Mechanical Behavior and the Fracture Mechanism in Monolayer Group-III Nitrides XN (X= Ga, In): Effect of Temperature and Point Vacancies

“…XN (X = Ga, In) are projected to be competitive nanomaterials for real-world applications in which the environment is likely to change dramatically. Predominantly, the steadiness of the XN-based devices and systems at extreme temperatures − is a serious disquiet in current nanoelectronics. NEMS, nanosensors, nanodevices, aerospace applications, fuel-cell applications, energy-harvesting systems, and nanoactuators demand extremely durable structures at high temperatures. ,, Therefore, characterization of the fracture behavior of XN at high temperatures is very essential to employ it in the next-generation NEMS and nanoelectronics.…”

Spatially Resolved Temperature Distribution in a Rare-Earth-Doped Transparent Glass-Ceramic

“…To effectively control the spatial thermal distribution of ever-increasing power densities in novel micro-and nano-electromechanical systems (MEMS/NEMS) and devices, more accurate temperature monitoring is needed [1][2][3]. For example, elevated channel temperatures present in novel high-electron-mobility transistors (HEMTs) can potentially cause malfunctions of the vital internal components [4][5][6][7]. Therefore, it is important to identify and analyze the local temperature variations and dynamics, not only on the device's surface but also internally where the thermal irregularities are usually generated [8].…”

Molecular Dynamics Simulations of Wettability, Thermal Transport, and Interfacial Liquid Structuring at the Nanoscale in Polar Solid–Liquid Interfaces

“…Recent developments in nanotechnology have demonstrated the potential of aluminum oxide or alumina (Al 2 O 3 ) for various applications due to its good chemical stability, wide band gap, and biological compatibility. − Special attention is drawn to alumina in aqueous environments, as the behavioral understanding of this solid–liquid interface is crucial for dielectric nanocomposites, water filtration, drug delivery, biosensing devices, combustion, among others. − In particular, the new developments in anodic alumina membranes, enabled by the progress in nanofabrication techniques, could be beneficial for filtration and separation of molecules, cells, or proteins, and evaporation in thermal management applications, see Figure (a). − Characterizing and tuning the inner nanopore geometry and electrostatic properties in alumina membranes facilitate molecular filtration, , while the interplay between the nanopore surface and the absorbed liquid thin film is critical for the evaporation performance . It has been suggested that most of the interfacial transport (specifically momentum and thermal) is strongly influenced by a thin layer, which usually encompasses no more than a few nanometers from the interfacial region. , Due to the reduced scale, the thickness of this region hinders accurate probing using the current experimental capabilities; therefore, atomistic-level simulations can provide useful insight into the interface and transport properties.…”