Thermal Investigation of GaN-Based Laser Diode Package

Hwang, Wong Joon; Lee, Tae Hee; Choi, Ji Ha; Kim, Hyung Kun; Nam, Ok Hyun; Park, Y.J.; Shin, Moo Whan

doi:10.1109/tcapt.2007.906346

Cited by 15 publications

(3 citation statements)

References 14 publications

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“…Three reasons are regarded as responsible for the variation of measured thermal resistance from the junction to ambient. First of all, the dominant cooling mechanism for natural cooling is convection, which mainly depends on the heat transfer coefficient [17] as expressed:…”

Section: Resultsmentioning

confidence: 99%

Transient thermal characterization of organic light-emitting diodes

Yang¹,

Wei²,

Zhang³

2012

Semicond. Sci. Technol.

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In this paper, a novel measurement approach of junction temperature and thermal resistance of organic light-emitting diodes (OLEDs) is reported. Transient thermal measurement is utilized to carry out the thermal study of OLEDs. A linear relationship between forward voltage and junction temperature is obtained at the sensor current of 0.56 μA for each pixel. The effects of input current and cooling conditions on the junction temperature and thermal resistance are discussed. It is found that the optical performance is greatly affected by the junction temperature. The average junction temperature of the OLED panel with the current density of 0.014 A cm −2 is 64.5 • C, while there exists a temperature difference of 14.5 • C and 43.5 • C with the center case and ambient temperature. In contrast to the natural cooling condition, a much smaller junction temperature rise and thermal resistance are obtained under the forced cooling condition. The thermal resistance from junction to ambient has an inverse relationship with input power under both natural and forced cooling conditions.

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Section: Resultsmentioning

confidence: 99%

Transient thermal characterization of organic light-emitting diodes

Yang¹,

Wei²,

Zhang³

2012

Semicond. Sci. Technol.

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“…Auger droop is not the only concern for efficiency reduction of SSL systems. Thermal management is also a very critical factor for high-power LEDs and LDs as the junction temperature (T j ) rise has shown significant impact, not only on PCE reduction but also on opto-electrical characteristics, as well as reliability of these devices [17,18]. Heat is being generated in an SSL devices due to non-radiative recombinations at the active region, radiation absorption inside and outside of the optical cavity, and electrical and material defects causing Joule heating [19].…”

Section: Introductionmentioning

confidence: 99%

Dynamic opto-electro-thermal characterization of solid state lighting devices: measuring the power conversion efficiency at high current densities

Azarifar¹,

Cengiz²,

Arık³

2022

J. Phys. D: Appl. Phys.

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Solid state lighting devices with high power densities require accurate characterization, as the rise of chip temperature impacts its optical, electrical, and lifetime characteristics. A detailed experimental study is performed in order to analyze opto-electro-thermal behavior as new high-power devices like laser diodes are becoming of interest. The outline of this article was inspired by two major issues identified in previous experimental approaches. First, there is some debate in the literature about the linearity of the temperature coefficient of the forward voltage. Second, there is a limited number of experimental reports on the temperature dependence of power conversion efficiency. We have shown that prior variations are the result of a diversity in the selection of electrical parameters during thermal calibrations, as both linear and non-linear relationships for temperature coefficient of voltage can be obtained. On the other hand, it was discovered that report scarcity for temperature-dependent studies can be related to the use of passive approaches for temperature-dependent measurements. In temperature-controlled environments, short pulses with high current densities may not ensure the thermal equilibrium of the device under test due to small thermal capacitance. This issue, as well as the lengthy process of passive measurements can be addressed by implementing a dynamic measurement method presented in this study. Finally, linear power conversion efficiency trends with junction temperature are demonstrated for both blue LEDs and LDs at high current densities.

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“…The thermal resistance could be reduced up to 40% by a proper design of the laser chip and epi-down bonding [2]. Thermal behavior of GaN-based laser diode packages are investigated, the results demonstrate that the total thermal resistance is controlled mainly by the packaging design rather than the chip structure itself [3]. Stephen Bull present results from a "by-emitter" degradation analysis technique about the degradation of high power laser bars [4], thermally induced current runaway, beginning in the edge emitters, is an important factor in the degradation of this bar and its eventual failure.…”

Section: Introductionmentioning

confidence: 99%

Thermal resistance analysis related to the degradation of GaAs-Based laser diodes

Qiao

Feng

Wang

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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Thermal transient measurement of the 808 nm GaAs-Based laser diodes (LDs) before and after the constant current stress are presented and discussed in this paper. Aging tests are carried out under the conditions of the constant current stress (1 A) for 255 hours. The total thermal resistance increases from 7.0 to 8.8 /W before and after degradation. Furthermore, the contribution of each component to the total thermal resistance has been obtained from the differential structure function and cumulative structure function before and after stress. The thermal resistance of chip maintain almost constant before and after stress, while significant increase in the thermal resistance of solder layer (indium attaching material) and package body are observed after degradation. These results indicate that the thermal properties of solder layer and package body degrade apparently as contrast to the chip of LDs. The thermal properties of solder layer and package body have critical effects on the performance of LDs. Thus the performance of LDs could be improved through optimizing of solder material and package body.

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Thermal Investigation of GaN-Based Laser Diode Package

Cited by 15 publications

References 14 publications

Transient thermal characterization of organic light-emitting diodes

Transient thermal characterization of organic light-emitting diodes

Dynamic opto-electro-thermal characterization of solid state lighting devices: measuring the power conversion efficiency at high current densities

Thermal resistance analysis related to the degradation of GaAs-Based laser diodes

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