Thermal-Induced Dielectric Switching with 40K Wide Hysteresis Loop Near Room Temperature

Abstract

A thermal-induced dielectric switching has been realized in two ion-pair crystal [CHN]·[HPO] (1, CHN = 3,5-diamino-1,2,4-triazolinium) through single-crystal-to-single-crystal phase transition (SCSC-PT). Upon cooling from room temperature, the 1D cation stripes that are composed of [CHN] cations have undergone a 90° sharp rotation around the c axis, accompanied by the transition of crystal stacking from loose unparallel (dynamic state) to compression parallel (static state) and reorientation of dipoles on the [CHN] cation, which thus resulted in high dielectric state to low dielectric state transformation. While on the warming run, the reverse process was rather sluggish, resulting in a reversible dielectric switching with ultralarge (about 40K wide) hysteresis loop near room temperature. It is thought that the large-sized polar cation stripes have a predominant influence on the switching properties of 1.

Double‐Decker Paramagnetic {(K)(H3Hhp)2}⋅2−Radical Dianions Comprising Two [30]Trithia‐2,3,5,10,12,13,15,20,22,23,25,30‐Dodecaazahexaphyrins and a Potassium Ion

“…17-13-01215), the JST (ACCEL) 27 (100150500019) project, and the Kyoto University Foundation. The initial work on startingH 3 Hhp was supported by the RussianF oundation for Basic Research (project no. 19-03-00888).…”

“…Te trapyrrole-based macrocyclesl ike porphyrin and phthalocyanine as well as their metallocomplexes are very importanti n nature due to their high biological activity [1] and practical importancea sd rugs, dyes, catalysts, and materials for solar cells, optoelectronics [2] and hydrogen bondedo rganic frameworks (HOFs). [3] Recently,e xpanded porphyrins have attracted atten-tion. [4] Among them the ABABAB-type macrocycles [5] containing three alternating thiadiazole (A) and isoindole (B) sub-units linked by meso-nitrogen atoms attracted much attention for their unique structure and properties.…”

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications

“…As one of the most fundamental components in IC, particularly for artificial intelligence (AI) circuits, new memory designs have emerged. [1][2][3][4][5][6][7][8][9] Some of them are based on the mechanism of charge storage into the junction. [10] Therefore, numerous memory designs have been proposed to replace dynamic random access memory (DRAM) [3,5] or Flash.…”

“…Meanwhile, memristors have attracted much attention due to their applications, such as multilevel applications. [4] However, they are all complex and require high technology different from the dominant silicon-based technology. For instance, a transistor with a semi-floating gate requires 2D materials and additional steps for a semi-floating gate.…”

“…[6] Electrical properties of a memristor are mainly controlled by 2 terminal technology, which is more difficult to control than those of the transistor with mature 3 or 4 terminal technology and high reliability. [4] Hence, their applications in real life are still very far due to the difficulties to match foundry lines. We have proposed a simpler memory transistor with simpler processing steps.…”