Thermal History Index as a bulk quality indicator for Czochralski solar wafers

Veirman, Jordi; Martel, Benoît; Letty, Elénore; Peyronnet, Rafaël; Raymond, G.; Cascant, M.; Enjalbert, N.; Danel, Adrien; Desrues, T.; Dubois, Sébastien; Picoulet, C.; Brun, Xavier F.; Bonnard, P.

doi:10.1016/j.solmat.2016.05.051

Cited by 6 publications

(6 citation statements)

References 14 publications

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“…[ O i ] at the selected positions was measured using OxyMap on as‐cut wafers and FTIR measurements on thick double‐side polished slices. Both techniques gave virtually identical results within a few percents.…”

Section: Methodsmentioning

confidence: 99%

Novel Way to Assess the Validity of Czochralski Growth Simulations

Veirman

Letty

Favre

et al. 2019

Physica Status Solidi (a)

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Growth engineers typically resort to simulations to improve Czochralski pulling processes. The temperature field across the ingot during processing governs many processes (e.g., pulling velocity and energy uptake) or material (e.g., silicon oxide precipitation and thermal defects content) parameters and therefore reproduces reality as faithfully as possible. Still, validation of temperature fields and their evolution (“thermal histories”) is complex as instrumentation of a rotating and growing ingot is technically challenging. Herein, a post‐growth experimental validation procedure is proposed, which is carried out on the finished ingot, based on the room temperature measurement of grown‐in oxygen‐related thermal donors, which can be seen as a relic of the ingot thermal history. The basis of the method is laid down and then illustrated through a practical case of an ingot pulled at Commissariat à l’Energie Atomique et aux Energies Alternatives‐National Institute for Solar Energy, France (CEA‐INES). The advantages and the limits of the method are presented and discussed.

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Section: Methodsmentioning

confidence: 99%

Novel Way to Assess the Validity of Czochralski Growth Simulations

Veirman

Letty

Favre

et al. 2019

Physica Status Solidi (a)

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“…Crystalline silicon material selection is crucial for SHJ manufacturing in order to limit production costs and assure high efficiencies. As this c-Si technology is all processed at low temperature (T<230°C), it is not possible to remove bulk c-Si impurities as performed for conventional homo-junction technologies using as-called "gettering" and cleaning [9][10]. For this reason, high quality Czochralski (Cz) wafers are used as substrates, which account for about 70 % of the cell production material costs.…”

Section: Materials Selection and Pre-productionmentioning

confidence: 99%

“…Detailed studies have been performed at CEA-INES pilot line to evaluate the impact of wafers properties on cell efficiencies and its parameters. Evaluations at the full ingot scale, for several suppliers has been performed showing that high oxygen content can lead to efficiency limitation in Cz ingot seed-end while metallic impurities may affect cells made with ingot tail-end wafers [10][11].…”

Section: Materials Selection and Pre-productionmentioning

confidence: 99%

High Efficiency Hetero-Junction: From Pilot Line To Industrial Production

Condorelli

Favre

Battaglia

et al. 2018

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC &Amp

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Combination of silicon heterojunction cell technology (SHJ) with bifacial module architecture is an appealing solution for manufactures who are focused on PV system performances. In this paper, we will present a study with an industrial perspective, initiated to address specific challenges of producing SHJ cells and modules in Europe. The impact of incoming wafer quality has been studied by analyzing at full ingot scale the efficiency performances of SHJ cells. The impact of long queue time prior to deposition is also reported. Finally, results of full size modules with 72 cells are presented.

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“…O XIDE precipitates (OPs) are common defects in the Czochralski (Cz) silicon and can cause severe efficiency degradation in solar cells produced from crystal regions with a high oxygen concentration [1]- [3]. During the solar cell production, oxygen precipitation is facilitated by the combination of the cooldown after crystallization during which nuclei form, the dopant source deposition at around 800°C (POCl 3 ) or 900-950°C (BBr 3 ), which leads to precipitate sizes sufficiently large to survive a following high-temperature step at which the precipitates grow sufficient enough to limit the charge carrier lifetime.…”

Section: Introductionmentioning

confidence: 99%