Thermal expansion of III–V materials in atomistic models using empirical Tersoff potentials

Detz, Hermann

doi:10.1049/el.2015.1302

Cited by 5 publications

(3 citation statements)

References 15 publications

(18 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Interestingly, peaks P 1 ,P 2 ,a n dP 3 of sample A are still observable at positions which closely correlate with those observed in Fig. 4.T h i s substrate dependent behavior may be due to the disparity in thermal expansion of the GaSb and GaAs substrates 56 or the presence of defects in sample B. Nomarski Microscopy, shown in Fig. 5(a 0 ) and (b 0 ), was performed at selected positions on each sample.…”

Section: Articlesupporting

confidence: 71%

Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

Kwan

Kesaria

Anyebe

et al. 2021

Applied Physics Letters

View full text Add to dashboard Cite

We report on a 10 lm InAs/GaSb type-II superlattice (T2SL) grown by molecular beam epitaxy on a GaAs substrate using an interfacial misfit (IMF) array and investigate the optical and structural properties in comparison with a T2SL grown on a GaSb substrate. The reference T2SL on GaSb is of high structural quality as evidenced in the high-resolution x-ray diffraction (HRXRD) measurement. The full width at half maximum (FWHM) of the HRXRD peak of the T2SL on GaAs is 5 times larger than that on GaSb. The long-wave infrared (LWIR) emission spectra were analyzed, and the observed transitions were in good agreement with the calculated emission energies. The photoluminescence (PL) intensity maxima (I max )o f$10 lm at 77 K is significantly reduced by a factor of 8.5 on the GaAs substrate. The peak fitting analysis of the PL profile indicates the formation of sub-monolayer features at the interfaces. PL mapping highlights the non-uniformity of the T2SL on GaAs which corroborates with Nomarski imaging, suggesting an increase in defect density.

show abstract

Section: Articlesupporting

confidence: 71%

Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

Kwan

Kesaria

Anyebe

et al. 2021

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Based on the available database, the CTE of III–V semiconductor materials typically ranges from 4.5 to 6.5 × 10 −6 K −1 , while metal substrates usually have a higher CTE exceeding 8 × 10 −6 K −1 . [ 35 ] The CTE of the FEP polymer, on the other hand, is measured at 9.4 × 10 −5 K −1 . [ 36 ] Thus, the presence of the FEP film on the surface of the solar cells helps prevent excessive expansion of the devices and consequently reduces the occurrence of device failures.…”

Section: Resultsmentioning

confidence: 99%

Electrostatically Sprayed Flexible Encapsulation for High‐Performance III–V Solar Cells

Zhang,

Xiong,

Gao

et al. 2023

Solar RRL

View full text Add to dashboard Cite

Multijunction solar cells that employ III–V semiconductors are highly efficient, lightweight, and flexible, rendering them excellent candidates for use in automobiles, satellites, or flexible electronics. To improve the operational stability of these high‐efficiency solar cells for practical applications, herein an innovative method for encapsulating high‐performance flexible III–V solar cells is proposed, which enables solar cell with a photoelectric conversion efficiency of 32.72% to maintain an efficiency of 31.67% after packaging under the AM1.5 global spectrum. The module remains the same efficiency of ≈29.7% under AM0 after encapsulation. The key to this approach is electrostatically spraying and curing fluorinated ethylene propylene materials to create a flexible, cost‐effective, and efficient encapsulation layer for III–V solar cells. The proposed encapsulation method demonstrates excellent adhesion, barrier properties, easy scalability, and long‐term stability, enabling enhanced performance, extended lifetimes, and improved reliability of III–V solar cells.

show abstract

“…This method was proven to lead to reliable convergence in the case of bulk material . The acceptance probability can be further reduced in order to match experimental data regarding the thermal expansion coefficient ().…”

Section: Modeling Methodsmentioning

confidence: 99%

Atomistic modeling of interfaces in III–V semiconductor superlattices

Maier

Detz

2016

Phys. Status Solidi B

View full text Add to dashboard Cite

Semiconductor heterostructures are well characterized experimentally and provide a solid basis for electronic and optoelectronic devices ranging from single interface to complex superlattice structures. Yet, structural and electronic models commonly describe the material properties in a continuum approach, which neglects the crystalline structure, as well as potential local variations of the composition and resulting strain. Empirical interaction potentials provide an efficient way to model chemical bonds and therefore allow a structural description of multi‐layer structures. This work provides a detailed introduction on methods to minimize the total energy of semiconductor heterostructures at an atomistic level. We present an algorithm to minimize the total energy and generate optimized interface configurations. The relaxed structures are then evaluated with respect to interfacial strain, where different strain calculation methods are evaluated and compared with experimental data.

show abstract

Thermal expansion of III–V materials in atomistic models using empirical Tersoff potentials

Cited by 5 publications

References 15 publications

Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

Electrostatically Sprayed Flexible Encapsulation for High‐Performance III–V Solar Cells

Atomistic modeling of interfaces in III–V semiconductor superlattices

Contact Info

Product

Resources

About