Thermal expansion of GaP within 20 to 300 K

Deus, P.; Voland, U.; Schneider, H. A.

doi:10.1002/pssa.2210800152

Cited by 29 publications

(8 citation statements)

References 7 publications

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“…It is believed that it may result from the piezoelectric effect due to the different thermal expansion coefficients of GaN and GaP in these coaxial nanowires. The linear thermal coefficient of GaP is in the range of (3.5−4.7) × 10 -6 K -1 from 200 to 300 K, which is larger than that of GaN ((2.5−3.4) × 10 -6 K -1 ) . When these core−shell nanowires are cooled from room temperature, the inside GaP core will contract more quickly than the outside GaN sheath.…”

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confidence: 84%

Synthesis and Characterization of Core−Shell GaP@GaN and GaN@GaP Nanowires

et al. 2003

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A convenient thermal CVD route to core−shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm -1 is found and assigned to a surface phonon mode.

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confidence: 84%

Synthesis and Characterization of Core−Shell GaP@GaN and GaN@GaP Nanowires

et al. 2003

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“…Considering the larger thermal expansion coefficient of MnP compared to GaP [MnP: a a ¼ 2.4 Â 10 À5 K À1 , a b ¼ 2.9 Â 10 À5 K À1 , and a c ¼ À 2.9 Â 10 À5 K À1 at 300 K (Ref. 35)], we find that every fifth MnP{001} plane coincides with every fourth GaP{110} plane within 0.6% at the growth temperature of T s ¼ 650 C. This estimated lattice mismatch is sufficiently small to allow the semicoherent epitaxial growth of MnP clusters in the GaP matrix with the indicated crystallographic plane alignments. 35)], we find that every fifth MnP{001} plane coincides with every fourth GaP{110} plane within 0.6% at the growth temperature of T s ¼ 650 C. This estimated lattice mismatch is sufficiently small to allow the semicoherent epitaxial growth of MnP clusters in the GaP matrix with the indicated crystallographic plane alignments.…”

Section: B Texture Of Mnp Nanoclusters and Local Epitaxial Relationsmentioning

confidence: 99%

MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study

Lambert-Milot¹,

Gaudet²,

Lacroix³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Full three dimensional x-ray diffraction reciprocal space maps combined with transmission electron microscopy measurements provide a systematic determination of the texture of GaP epilayers containing embedded MnP nanoclusters grown on GaP(001) by organometallic vapor phase epitaxy. This approach reveals that the texture of the MnP clusters depends on the growth surface morphology and bonding configuration and on the lattice mismatch at the cluster/matrix interfaces during growth. It demonstrates that the orthorhombic MnP nanoclusters are oriented along specific GaP crystallographic directions, forming six well defined families, whose population is influenced by the growth temperature and the film thickness. The clusters principally grow on GaP(001) and GaP{111} facets with a small fraction of clusters nucleating on higher-index GaP{hhl} facets. Most epitaxial alignments share a similar component: the MnP(001) plane (c-axis plane) is parallel to the GaP{110} plane family. Axiotaxial ordering between the MnP clusters and the GaP matrix is also observed. Furthermore, with this systematic approach, all phases present in these heterogeneous films can be identified. In particular, traces of hexagonal Mn2P precipitates have been observed while their formation can be avoided by lowering the growth temperature. Comparing the structural results presented here with magnetic measurement carried out on similar samples confirms that the effective magnetic properties of the heterogeneous layer can be tuned by controlling the texture of the ferromagnetic nanoclusters.

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“…The emitted photon will be slightly red-shifted relative to the band gap energy, however, because the electronic trap state introduced by the nitrogen dopant lies at an energy slightly below the conduction band edge. tice parameter shrinks from 5.451 A at 300 K to 5.447 A at 77 K (5). Reducing the internuclear distance increases the orbital overlap and thus raises the band gap energy;5 over the same temperature range, Eg of GaP increases from 2.27 eV (X = 550 nm) at 300 K to 2.33 eV (X = 530 nm) at 77 K (6).…”

Section: Lecture Demonstrationmentioning

confidence: 99%