2016
DOI: 10.1007/s10853-016-0387-5
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Thermal expansion of bulk nanostructured n-type SiGe nanocomposite from 300 to 1400 K

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Cited by 11 publications
(3 citation statements)
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“…Before and after the phase transition temperature range, the linear coefficient of thermal expansion (CTE) values is around 28 × 10 –6 K –1 and 34 × 10 –6 K –1 . These are quite high values compared with the state-of-the-art TE materials, such as 14 × 10 –6 K –1 for Bi 2 Te 3 , 13.2 × 10 –6 K –1 for PbTe, 3.5 × 10 –6 K –1 for Si 0.8 Ge 0.2 , and 9.7 × 10 –6 K –1 for Yb 0.3 Co 4 Sb 12 . When the heat capacity approaches the Dulong-Petit value, the Grüneisen parameter γ, which reflects the strength of the lattice anharmonicity, is in proportional to the value of CTE .…”
mentioning
confidence: 97%
“…Before and after the phase transition temperature range, the linear coefficient of thermal expansion (CTE) values is around 28 × 10 –6 K –1 and 34 × 10 –6 K –1 . These are quite high values compared with the state-of-the-art TE materials, such as 14 × 10 –6 K –1 for Bi 2 Te 3 , 13.2 × 10 –6 K –1 for PbTe, 3.5 × 10 –6 K –1 for Si 0.8 Ge 0.2 , and 9.7 × 10 –6 K –1 for Yb 0.3 Co 4 Sb 12 . When the heat capacity approaches the Dulong-Petit value, the Grüneisen parameter γ, which reflects the strength of the lattice anharmonicity, is in proportional to the value of CTE .…”
mentioning
confidence: 97%
“…These pairs are usually chosen from materials with similar mechanical properties, particularly thermal expansion coefficients, to mitigate high-pressure stresses and potential damage to the TEGs at elevated temperatures. 28 Disparities in the thermal expansion coefficients of n and p-type materials can cause significant stress and damage to TEGs. It is also important to note that the same material can exhibit either n or p-type by varying the doping levels of electrons or holes.…”
Section: Thermoelectric Materials For Rtgmentioning
confidence: 99%
“…Замечено, что для макрокристалла Si 1−C −Ge C даже при 300 K экспериментальные данные имеют большой разброс и зависят от многих факторов. Например, исследования последних лет [31,32] показали, что величина такого точно измеримого параметра как коэффициент теплового расширения α p (Si 1−C −Ge C ) зависит от следующих факторов: от типа проводимости образца (nили p-типа), от того как проводились измерения (при нагреве или при охлаждении образца), от состояния структуры (наноструктурирование образца увеличивает величину α p ). Например, при 300 K для C = 0.2 имеем: α p (Si 0.8 −Ge 0.2 )/[10 −6 K −1 ] = 10.5 [31]−23.1 ± 0.45 [32].…”
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