Thermal evaporation synthesis of SiC/SiO<sub>x</sub> nanochain heterojunctions and their photoluminescence properties

Liu, Haitao; Huang, Zhaohui; Huang, Juntong; Fang, Minghao; Liu, Yangai; Wu, Xiaowen

doi:10.1039/c4tc01391c

Cited by 113 publications

(130 citation statements)

References 36 publications

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“…Due to no droplets found at the tips of SiC nanowires indicating that the growth mechanism is more reasonable attributed to a VS mechanism rather than a VLS mechanism as reported in many other literature. [33,34] Combined with the FTIR spectrum (Fig. 3, it can be noticed that SiC nanowire consists of a crystalline core coated with a thin amorphous shell layer (3-4 nm thickness).…”

Section: Resultsmentioning

confidence: 96%

Ultra-long SiC nanowires synthesized by a simple method

Dong

Gui

et al. 2015

RSC Adv.

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Ultra-long SiC nanowires with the lengths ranging from several millimeters to one centimeter were successfully prepared by the raw materials of graphite, silicon, silica and alumina via a simple carbon thermal reduction method in a tube furnace at 1300 o C. Scanning electron microscopy (SEM), electron energy scattering (EDX), Xray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR) were employed to characterize the morphology and microstructure of the obtained products. The results showed that the nanowires mostly consisted of 3C-SiC and exhibited mainly a straight-line shape with diameters in the range of 30-150 nm. Alumina may be as a novel and highly effective mediator playing an important role in controlling the concentration of SiO during the growth of ultra-long SiC nanowires and an alumina-assisted growth of vapor-solid (VS)mechanism was proposed for the growth mode of the ultra-long SiC nanowires.

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Section: Resultsmentioning

confidence: 96%

Ultra-long SiC nanowires synthesized by a simple method

Dong

Gui

et al. 2015

RSC Adv.

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“…17,[28][29][30][31] Instead, hydrothermal synthesis as an effective method to fabricate Bi 2 Te 3 -based materials takes much shorter time, 32,33 while the synthesis of a single-phase Bi 0.5 Sb 1.5 Te 3 solid solution by hydrothermal reaction is rarely reported. 18,34,35 Furthermore, the reported room-temperature thermoelectric properties of the Bi 2 Te 3 -based alloy synthesized by the hydrothermal method are not as good as expected. 18,35,37 Therefore, it is desirable to develop a facile hydrothermal method to prepare an ideal single-phase Bi 0.5 Sb 1.5 Te 3 alloy with optimized thermoelectric properties.…”

Section: -27mentioning

confidence: 99%

“…18,34,35 Furthermore, the reported room-temperature thermoelectric properties of the Bi 2 Te 3 -based alloy synthesized by the hydrothermal method are not as good as expected. 18,35,37 Therefore, it is desirable to develop a facile hydrothermal method to prepare an ideal single-phase Bi 0.5 Sb 1.5 Te 3 alloy with optimized thermoelectric properties.…”

Section: -27mentioning

confidence: 99%

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi_0.5Sb_1.5Te₃ by a hydrothermal synthesis method

et al. 2017

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Cu-doped p-type Bi 0.5 Sb 1.5 Te 3 compounds have been prepared by a facile hydrothermal method. X-ray powder diffraction analysis shows that the lattice parameter decreases with the Cu content, indicating that Cu + ions are distributed on the crystal site of Bi/Sb, which is further confirmed by the p-type conducting behavior of the Cu-doped Bi 0.5 Sb 1.5 Te 3 . With the addition of Cu, the hole carrier concentration increases, and meanwhile the lattice thermal conductivity decreases. Furthermore, the greatly raised hole carrier concentration effectively suppresses the bipolar effect, which is beneficial for improving the thermoelectric properties. A dimensionless thermoelectric figure of merit (ZT) value of $1.2 at room temperature is achieved for the sample with 0.6 wt% Cu (nominal composition), and the ZT value increases with the temperature to $1.5 at 150 C. Cu-doped Bi 0.5 Sb 1.5 Te 3 samples exhibit most excellent thermoelectric performance among the presently available (Bi,Sb) 2 Te 3 -based materials, implying great potential as near room temperature thermoelectric materials.

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“…The bands from Si-O-Si bending vibrations (480 cm À1 ) and transversal optic mode Si-C vibrations (790 cm À1 ) can be detected by FT-IR spectra, indicating that the as-achieved products are composed of SiC and SiO 2 . 51 However, the bands from Si-O-Si bending vibrations (480 cm À1 ) were not detected at 1500°C and 1600°C, which manifests that the crystalline of assynthesized products get better with the increasing of temperature.…”

Section: The Effect Of Heat-treatment Temperature On Nanowire Growthmentioning

confidence: 91%

In situ synthesis of SiC nanowire porous layer on carbon/carbon composites

Zhang

Sun

et al. 2017

J Am Ceram Soc

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SiC nanowire porous layer was synthesized in situ by a simple two‐step technique involving slurry painting and high temperature heat‐treatment without catalyst assist. The proposed method is effective and low‐cost, which can prepare plentiful and high‐purity SiC nanowires (SiCNWs). The microstructure of SiCNWs and the effects of heat‐treatment temperatures on the synthesis of SiCNWs were investigated in detail. Results show that the as‐synthesized NWs consisted of 3C–SiC, with the length of up to several hundred micrometers and the diameter of 50‐100 nm at 1500°C. Meanwhile, the diameter of SiCNW increases with the increasing of heat‐treatment temperature. The growth process of the SiCNWs can be controlled by the vapor‐solid growth mechanism. After introducing SiCNWs into the SiC coating prepared by pack cementation, the elastic modulus of the nanowire‐toughened SiC coating was increased by 35% compared to SiC coating without SiCNWs.

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Thermal evaporation synthesis of SiC/SiO_x nanochain heterojunctions and their photoluminescence properties

Abstract: Chainlike SiC/SiOx heterojunctions were prepared on a silicon wafer by a simplified catalyst-free thermal chemical vapour deposition method.

Cited by 113 publications

References 36 publications

Ultra-long SiC nanowires synthesized by a simple method

Ultra-long SiC nanowires synthesized by a simple method

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi_0.5Sb_1.5Te₃ by a hydrothermal synthesis method

In situ synthesis of SiC nanowire porous layer on carbon/carbon composites

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Thermal evaporation synthesis of SiC/SiOx nanochain heterojunctions and their photoluminescence properties

Abstract: Chainlike SiC/SiOx heterojunctions were prepared on a silicon wafer by a simplified catalyst-free thermal chemical vapour deposition method.

Cited by 113 publications

References 36 publications

Ultra-long SiC nanowires synthesized by a simple method

Ultra-long SiC nanowires synthesized by a simple method

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi0.5Sb1.5Te3 by a hydrothermal synthesis method

In situ synthesis of SiC nanowire porous layer on carbon/carbon composites

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Product

Resources

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Thermal evaporation synthesis of SiC/SiO_x nanochain heterojunctions and their photoluminescence properties

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi_0.5Sb_1.5Te₃ by a hydrothermal synthesis method