Thermal, Electrical and Dielectric Characteristics of SnSbS Thin Films for Solar Cell Applications

Combinatorial synthesis of tin antimony sulfide thin films for solar cell application

“…As we move further from composition position 6 to 10, with a constant increase in the antimony concentration, the bandgap is noted further to decrease and found to be approached to value 1.34 eV for composition 10 where the antimony concentration is 32% as shown in Figure 5. It is further reported that a resistive hysteresis behavior arises above the 150°C annealing temperature resulting in the enhancement of the photovoltaic properties of the sulfosalt materials 25 . Similarly, the increase in the particle size with annealing temperature is noticeably increased as can be seen from Table 2, and hence an increase in the poly crystallinity with the increase in the antimony contents are considered to be responsible for decreasing the bandgap energy as well as transmittance.…”

“…It is further reported that a resistive hysteresis behavior arises above the 150 C annealing temperature resulting in the enhancement of the photovoltaic properties of the sulfosalt materials. 25 Similarly, the increase in the particle size with annealing temperature is noticeably increased as can be seen from Table 2, and hence an increase in the poly crystallinity with the increase in the antimony contents are considered to be responsible for decreasing the bandgap energy as well as transmittance.…”

Optoelectrical properties of the ternary chalcogenide SnSb2S5 as a new absorber layer for photovoltaic application

“…On the other hand, a combinatorial synthesis of Sn-Sb-S compounds was done and showed the existence of SnSb 2 S 4 , Sn 2 Sb 2 S 5 , and Sn 3 Sb 2 S 6 phases [15][16][17]. The sulfosalt and pseudo-binary chalcogenide series (Sn x Sb y S z ) have shown better optoelectronic properties and thin film PV devices [18][19][20][21]. A high number of sulfosalt types materials under natural environmental conditions demonstrates thermodynamic stability and an air-abundant low cost for applications [22][23][24].…”

A new route for the synthesis of Sn3Sb2S6 thin films by chemical deposition

“…The TAS materials have prepared by different methods such vacuum evaporation process, thermal evaporation, electro-pyroelectric technique, pulsed laser deposition, electron beam, among others (Abdelkader et al, 2016Mellouki et al, 2018;Jebali et al, Chalapathi et al, 2018;Dittrich et al, 2009;Bennaji, et al 2019, Gassoumi et al, 2015. However, chemical bath deposition is simple method widely used to obtain semiconductor thin films on substrates due to some advantages, such as large deposition area, reproducibility, low cost equipment and law temperature processes (Lee et al, 2008 andHodes, 2003 and2007).…”

“…(SnS)m(Sb 2 S 3 )n thin films, including Sn 3 Sb 2 S 6 , were prepared by thermal evaporation using the glancing angle deposition technique (Abdelkader et al, 2018), the Sn 3 Sb 2 S 6 thin films showed direct band gap of 1.67 eV, absorption coefficients of 10 5 cm −1 and photocurrent of 25 mA/cm 2 for the sample with a thickness of approximately 250 nm. Bennaji et al (2019) obtained Sn 3 Sb 2 S 6 thin films via vacuum evaporation process followed by annealing process. They noticed that thermal conductivity and heat capacity values of the thin films increased by increasing annealing temperature, and the conductance was thermally activated, with an activation energy of about 0.813 eV.…”