Thermal effects on the forward characteristics of silicon p-i-n diodes at high pulse currents

Silber, D.; Robertson, M. J.

doi:10.1016/0038-1101(73)90046-4

Cited by 31 publications

(10 citation statements)

References 9 publications

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“…Therefore, the SiC pn diode could be shown to have superior heat resistance to Si pn diode. From [10][11] [12], the cause of the diode destruction for a surge current was reported as follows.…”

Section: Results Of Measurementsmentioning

confidence: 99%

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High surge forward current ruggedness of 5kV class 4H-SiC pn diode

Ogata

Asano

Sugawara

et al. 2010

The 2010 International Power Electronics Conference - ECCE ASIA -

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The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800 O C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm 2 ) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.Index Terms--intrinsic carrier density, negative temperature coefficient resistor, SiC pn diode, surge current ruggedness

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Section: Results Of Measurementsmentioning

confidence: 99%

“…Fig. 11 shows the temperature dependences of the resistances obtained from the I-V characteristics of Si pn diode in the reference [10]. The negative temperature coefficient resistance behavior appeared at the junction temperature of over 430 O C during the destruction of the Si pn diode.…”

Section: Results Of Measurementsmentioning

confidence: 99%

High surge forward current ruggedness of 5kV class 4H-SiC pn diode

Ogata

Asano

Sugawara

et al. 2010

The 2010 International Power Electronics Conference - ECCE ASIA -

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show abstract

“…During a surge event, the junction temperatures inside the semiconductor devices can reach extremely high values, possibly several times the maximum rated temperature. It was reported that the main failure mechanism for standard silicon diode and transistor chips within module housings, is the melting of the anode-side metallization [32,33,34].…”

Section: Discussionmentioning

confidence: 99%

Investigation of 1200 V SiC MOSFETs’ Surge Reliability

Wang

Ren

et al. 2019

Micromachines

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In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experimental results show that the maximum surge currents that the devices can withstand are similar for both cases. It is found that short circuits occurred between the gate and the source in the failed devices. The characteristics of the body diode have also changed after the tests. By measuring the device characteristics after each surge current is applied, it can be concluded that the damages to the gate oxide layer and the body diode occurred only when the maximum surge current is applied. By decapping the failed devices and observing the cross section of the damaged cell, it is found that high temperature caused by excessive current flow through the devices during the surge tests is the main reason for the device failure. Finally, the TCAD simulation of the devices has been carried out to bring insight into the operation of the devices during the surge events.

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“…The uppermost curves are current data. model of Choo (1,(8)(9)(10) for a current density of 50 ,000A/cns 2 give ~A a 1018 for the average steadyNotice in Fig. 9, the shift of current denstate base carrier concentration .…”

Section: Fi G 1 -Bloc K Diagram Of the Experimenta L Systemmentioning

confidence: 99%

“…This is threaded into a device mounting pedestal (1) up on which the test device (13) is mounted . The concentric pulse forming networks are connected to flange ( 12), and cover plate ( 8 ).…”

Section: 3mentioning

confidence: 99%

Optically Activated Switch.

Lowry¹

1978

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Thermal effects on the forward characteristics of silicon p-i-n diodes at high pulse currents

Cited by 31 publications

References 9 publications

High surge forward current ruggedness of 5kV class 4H-SiC pn diode

High surge forward current ruggedness of 5kV class 4H-SiC pn diode

Investigation of 1200 V SiC MOSFETs’ Surge Reliability

Optically Activated Switch.

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