2008
DOI: 10.1080/09500340701627610
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Thermal doping of rare-earth ions in gallium nitride

Abstract: Doping of rare-earth ions in epitaxial gallium nitride material has been performed through a thermal diffusion process. The technique involves a brief photolytic etching of the surface followed by heating with a melt of rare-earth salt under reducing conditions. Europium-doped GaN pumped with above gap UV radiation showed strong red emission which was insensitive to a moderately strong magnetic field. The temperature dependence of the intensity of this red emission is also described. Neodymium caused surface p… Show more

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Cited by 2 publications
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