Thermal dissociation and desorption of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">P</mml:mi><mml:msub><mml:mi mathvariant="normal">H</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>on Si(001): A reinterpretation of spectroscopic data

Wilson, H. A.; Warschkow, Oliver; Marks, Nigel A.; Curson, Neil J.; Schofield, Steven R.; Reusch, T. C. G.; Radny, Marian W.; Smith, P. V.; McKenzie, David R.; Simmons, M. Y.

doi:10.1103/physrevb.74.195310

Cited by 64 publications

(77 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Extensive theoretical modeling 19,[28][29][30][31][32][33] in conjunction with detailed STM images provided a consistent interpretation of the first stage of this reaction, namely the thermal dissociation of PH 3 into phosphorus and hydrogen adatoms. However, the subsequent incorporation reactions that take phosphorus adatoms into the surface remain unclear.…”

Section: Introductionmentioning

confidence: 82%

“…The temperature at which hydrogen is observed to diffuse is also 650 K. 33,53 The similarity of these temperature requirements suggests that hydrogen diffusion is the rate-determining process in the experimental setting. We postulate that hydrogen must diffuse away from the phosphorus adatom and create space to allow incorporation, thereby reconciling our low incorporation barrier with the experimental findings.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Diffusion pathways of phosphorus atoms on silicon (001)

et al. 2009

View full text Add to dashboard Cite

Using density functional theory and a combination of growing string and dimer method transition state searches, we investigate the interaction of phosphorus atoms with the silicon (001) surface.We report reaction pathways for three technologically important processes: diffusion of phosphorus adatoms on the surface, incorporation of the phosphorus adatom into the surface, and diffusion of the incorporated phosphorus atom within the surface. These reactions have direct relevance to nanoscale lithographic schemes capable of positioning single phosphorus atoms on the silicon surface. Temperatures of activation for the various processes are calculated and, where possible, compared with experiment.

show abstract

Section: Introductionmentioning

confidence: 82%

Section: Discussionmentioning

confidence: 99%

Diffusion pathways of phosphorus atoms on silicon (001)

et al. 2009

View full text Add to dashboard Cite

show abstract

“…1d,e), which can accommodate a maximum of four P donors (see Supplementary Fig. S1 and Supplementary Methods) 11 . Two possible configurations of these four donors are shown by the white circles.…”

mentioning

confidence: 99%

Spin readout and addressability of phosphorus-donor clusters in silicon

et al. 2013

Self Cite

View full text Add to dashboard Cite

The spin states of an electron bound to a single phosphorus donor in silicon show remarkably long coherence and relaxation times, which makes them promising building blocks for the realization of a solid-state quantum computer. Here we demonstrate, by high-fidelity (93%) electrical spin readout, that a long relaxation time T 1 of about 2 s, at B ¼ 1.2 T and TE100 mK, is also characteristic of electronic spin states associated with a cluster of few phosphorus donors, suggesting their suitability as hosts for spin qubits. Owing to the difference in the hyperfine coupling, electronic spin transitions of such clusters can be sufficiently distinct from those of a single phosphorus donor. Our atomistic tight-binding calculations reveal that when neighbouring qubits are hosted by a single phosphorus atom and a cluster of two phosphorus donors, the difference in their electron spin resonance frequencies allows qubit rotations with error rates E10 À 4 . These results provide a new approach to achieving individual qubit addressability.

show abstract

“…Annealing at 350 C causes one fragment to leave the surface and the remaining PH 2 fragment transitions to an Si-P heterodimer. 20 The large exposed areas of the silicon surface that define the SET, reservoir, and gate electrodes are also phosphorus doped and annealed, resulting in metallic conduction 21 with a carrier density…”

mentioning

confidence: 99%

Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

Hile

House

Peretz

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected radio frequency (RF) excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (∼35%), allowing us to independently extract a neutral donor charging energy ∼62 ± 17 meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.

show abstract

Thermal dissociation and desorption ofPH3on Si(001): A reinterpretation of spectroscopic data

Cited by 64 publications

References 41 publications

Diffusion pathways of phosphorus atoms on silicon (001)

Diffusion pathways of phosphorus atoms on silicon (001)

Spin readout and addressability of phosphorus-donor clusters in silicon

Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

Contact Info

Product

Resources

About