Thermal desorption spectra of SiO2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate/O3 atmospheric-pressure chemical vapor deposition

Abstract

SiO 2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate [TEOS, Si(OC2H5)4]/O3 atmospheric-pressure chemical vapor deposition (APCVD) were analyzed by thermal desorption spectra (TDS). The TDS results show that more silanols were incorporated during deposition and more water was absorbed during and after deposition in films deposited on Si substrates than on thermal oxide substrates. The latter result indicates that the elimination of water by-products is not the limiting step in TEOS/O3 APCVD. Based on the former result, a silanol model was proposed for the surface processes. On surfaces with a uniform and high density of silanol sites, or on which silanols readily form under TEOS/O3 APCVD conditions, the active silanol groups in the gas phase contribute to film formation and replenish silanol sites, resulting in continuous, high growth rates. On surfaces with few silanol sites, it is difficult to form silanol sites and the nonsilanol-containing polysiloxanes contribute to film formation, resulting in continuous, low growth rate. This model explains well both the surface dependence and the memory effect of TEOS/O3 APCVD.

Modeling heterogeneity and memory effects on the kinetic roughening of silica films grown by chemical vapor deposition

“…Physically, the correlations of the noise arise from the coexistence of memory effects and surface heterogeneity during silica CVD growth. 18,19 It is important to stress that these new findings do not invalidate our previous results concerning the CVD silica growth evolution, rather they contribute to a more detailed understanding of such a complex growth process.…”

“…From these data it is evident that both sets of films have both active and passive ͑namely, less active͒ sites, and that the high-temperature set presents a lower concentration of active sites than the low-temperature set. On the other hand, it has been recently reported 18,19 for silica CVD films deposited from tetraethylorthosilicate ͑TEOS͒/ozone precursors that there exist memory effects during growth that influence the final film morphology, in particular, the film surface roughness. These memory effects are related to the existence of surface sites of different activities for deposition, and to the persistence in time of the activity properties for a given site on the substrate plane.…”

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

“…8. [16][17][18][19] Hirashita et al confirmed that the first peak was due to adsorbed water during air exposure, which was hydrogenbonded with hydroxyl groups ͑-OH͒ on the surface of pores in the film. 16 The second peak was confirmed to be due to the water generated by the decomposition of Si-OH.…”

A Scalable, High‐Throughput, and Environmentally Benign Approach to Polymer Dielectrics Exhibiting Significantly Improved Capacitive Performance at High Temperatures

“…On the other hand, in PECVD, by placing a dielectric layer between the electrodes to increase the mean free path of plasma species and avoid arc discharge, high‐quality deposition as a consequence of stable and uniform discharge plasma can be achieved at atmospheric pressure. Most of the previous atmospheric pressure PECVD studies are implemented at elevated temperatures, i.e., 100–450 °C . To realize room‐temperature operation and stable deposition, in this work we use a carefully controlled microsecond‐pulse voltage with optimized ramping rate, frequency, and amplitude (see Experimental Section in the Supporting Information).…”