2014
DOI: 10.1016/j.ijhydene.2014.05.102
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Thermal desorption of tritium and helium in aged titanium tritide films

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Cited by 21 publications
(9 citation statements)
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“…Ti films and Mo interlayers were electron beam evaporated onto polished single crystal Si (110) substrates by using source materials of Ti bulk (PrMat, Shanghai, China, 99.99% purity, 25 mm in diameter) and Mo bulk (PrMat, Shanghai, China, 99.99% purity, 25 mm in diameter) [4,13]. Before deposition, the Si substrates were ultrasonically cleaned in ethanol and acetone and outgassed at 700 °C for 2 h in a chamber with a base vacuum pressure better than 2 × 10 −4 Pa.…”
Section: Methodsmentioning
confidence: 99%
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“…Ti films and Mo interlayers were electron beam evaporated onto polished single crystal Si (110) substrates by using source materials of Ti bulk (PrMat, Shanghai, China, 99.99% purity, 25 mm in diameter) and Mo bulk (PrMat, Shanghai, China, 99.99% purity, 25 mm in diameter) [4,13]. Before deposition, the Si substrates were ultrasonically cleaned in ethanol and acetone and outgassed at 700 °C for 2 h in a chamber with a base vacuum pressure better than 2 × 10 −4 Pa.…”
Section: Methodsmentioning
confidence: 99%
“…The Mo interlayer was first grown on the Si substrate at a temperature of 500 °C, followed by Ti film evaporation on the Mo layer to form Si/Mo/Ti multilayer films. The Ti films were grown at a temperature of 700 °C to avoid the severe oxidation of the Ti-based getter material [4,46]. The evaporation rates detected by the IC5 thin film deposition controller were 15 nm/s and 2 nm/s for the Ti and Mo films, respectively.…”
Section: Methodsmentioning
confidence: 99%
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