Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon Arthur; Geib, K.M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; Tauke‐Pedretti, Anna; Nordquist, Christopher

doi:10.1109/tcpmt.2016.2541615

Cited by 27 publications

(8 citation statements)

References 19 publications

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“…Here, we demonstrate the direct bonding of diamond and GaAs/InGaP, which has the self-heating problem leading to the deterioration of device performance and reliability [14,15]. High-pressure and high-temperature synthetic Ib type (100) single-crystal diamond substrate and GaAs/ InGaP epitaxial layer grown on GaAs substrate were used for the bonding experiments.…”

Section: Methodsmentioning

confidence: 99%

Room temperature direct bonding of diamond and InGaP in atmospheric air

et al. 2021

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a new technique of diamond and inGaP room temperature bonding in atmospheric air is reported. Diamond substrate cleaned with h 2 sO 4 /h 2 O 2 mixture solution is bonded to inGaP exposed after removing the Gaas layer by the h 2 sO 4 /h 2 O 2 /h 2 O mixture solution. the bonding interface is free from interfacial voids and mechanical cracks. an atomic intermixing layer with a thickness of about 8 nm is formed at the bonding interface, which is composed of c, in, Ga, P, and O atoms. after annealing at 400 °c, no exfoliation occurred along the bonding interface. an increase of about 2 nm in the thickness of the atomic intermixing layer is observed, which plays a role in alleviating the thermal stress caused by the difference of the thermal expansion coefficient between diamond and inGaP. the bonding interface demonstrates high thermal stability to device fabrication processes. this bonding method has a large potential for bonding large diameter diamond and semiconductor materials.

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Section: Methodsmentioning

confidence: 99%

Room temperature direct bonding of diamond and InGaP in atmospheric air

et al. 2021

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“…[9][10][11][12][13] The self-heating effect (SHE) seriously affects the reliability and stability of the devices, such as the reduction of electron mobility and saturation velocity, owing to the rise of the device temperature. [14,15] Thus the poor thermal conductivity of β -Ga 2 O 3 limits its application in the field of high temperature and high voltage. [16,17] To overcome the poor thermal property of β -Ga 2 O 3 , a series of methods have been proposed including heterogeneous integration, [18][19][20][21][22] embedded cooling micro-channels, [23] topside air-jet impingement, [24] and so on.…”

Section: Introductionmentioning

confidence: 99%

Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes*

Xiang

Zhou

et al. 2021

Chinese Phys. B

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The ultra-wide bandgap semiconductor β gallium oxide (β-Ga2O3) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga2O3, their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga2O3 Schottky barrier diodes (SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga2O3, work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga2O3 plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga2O3 SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga2O3 diode.

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“…Low emissivity, characteristic of many metallization structures, can also be an obstacle for infrared thermal measurements. To improve measurement capabilities for low-emissivity targets, a coating of a high-emissivity material can be applied to the sample surface [15][16][17]. This method can be effective, as it increases the amount of emitted radiation for detection, minimizes surface reflections, and reduces radiative contributions from underlying material layers [16].…”

Section: Introductionmentioning

confidence: 99%

“…First, the measured thermal distribution can be altered due to lateral heat spreading in the coating [15]. Furthermore, the cross-plane thermal conductivity will induce a temperature gradient through the thickness of the coating, which is a source of error and causes a reduction in the measured surface temperature [17]. For certain applications, the use of an infrared microsensor can be employed to more accurately determine hotspot temperatures and reduce errors introduced by lateral heat spreading of the surface coating [18].…”

Section: Introductionmentioning

confidence: 99%

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Lundh

Shervin

et al. 2019

Journal of Electronic Packaging

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GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

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Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

Cited by 27 publications

References 19 publications

Room temperature direct bonding of diamond and InGaP in atmospheric air

Room temperature direct bonding of diamond and InGaP in atmospheric air

Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes*

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

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Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

Cited by 27 publications

References 19 publications

Room temperature direct bonding of diamond and InGaP in atmospheric air

Room temperature direct bonding of diamond and InGaP in atmospheric air

Device topological thermal management of β-Ga2O3 Schottky barrier diodes*

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

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Product

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Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes*