Thermal Decomposition Process of Ultrathin Oxide Layers on Si(100)

郁也, 杵淵; 浩樹, 山口; 幸紀, 崎山; 周, 高木; 洋一郎, 松本

doi:10.1380/jsssj.29.537

Cited by 3 publications

(2 citation statements)

References 26 publications

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“… 3 ) and a lower bound one of 3.3 eV (Engstrom et al . 2 ), the latter one being close to what is found for Si(001) 1 , 2 , 5 , 6 . Desorption energies were not calculated for the Si(111) surface.…”

Section: Resultssupporting

confidence: 86%

“…Finally, our fitting procedure leading to the extraction of the three kinetic parameters differs from the Avrami analysis by Kinefuchi and coworkers 7 who chose deliberately an activation energy equal to that of SiO g desorption at nearly zero oxygen coverage 6 . This a priori choice may lead to a non-integer n exponent between 2 (instantaneous nucleation) and 3 (constant nucleation rate), of unphysical meaning (see “Methods” subsection “Fitting of the desorption curves with a non-isothermal Avrami kinetic model”), unless one concedes it reflects a nucleation rate that decays exponentially with time 64 .…”

Section: Resultsmentioning

confidence: 99%

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Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy

Gallet

Kazzi

Bournel

et al. 2017

Sci Rep

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Despite thermal silicon oxide desorption is a basic operation in semiconductor nanotechnology, its detailed chemical analysis has not been yet realized via time-resolved photoemission. Using an advanced acquisition system and synchrotron radiation, heating schedules with velocities as high as 100 K.s−1 were implemented and highly resolved Si 2p spectra in the tens of millisecond range were obtained. Starting from a Si(111)-7 × 7 surface oxidized in O2 at room temperature (1.4 monolayer of oxygen), changes in the Si 2p spectral shape enabled a detailed chemical analysis of the oxygen redistribution at the surface and of the nucleation, growth and reconstruction of the clean silicon areas. As desorption is an inhomogeneous surface process, the Avrami formalism was adapted to oxide desorption via an original mathematical analysis. The extracted kinetic parameters (the Avrami exponent equal to ~2, the activation energy of ~4.1 eV and a characteristic frequency) were found remarkably stable within a wide (~110 K) desorption temperature window, showing that the Avrami analysis is robust. Both the chemical and kinetic information collected from this experiment can find useful applications when desorption of the oxide layer is a fundamental step in nanofabrication processes on silicon surfaces.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy

Gallet

Kazzi

Bournel

et al. 2017

Sci Rep

View full text Add to dashboard Cite

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Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires

Häuser

Blumberg

Liborius

et al. 2021

Journal of Crystal Growth

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Interface Effects in the Stability of 2D Silica, Silicide, and Silicene on Pt(111) and Rh(111)

Krinninger,

Kraushofer,

Refvik

et al. 2024

ACS Appl. Mater. Interfaces

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Ultrathin two-dimensional silica films have been suggested as highly defined conductive models for fundamental studies on silica-supported catalyst particles. Key requirements in this context are closed silica films that isolate the gas phase from the underlying metal substrate and stability under reaction conditions. Here, we present silica bilayer films grown on Pt(111) and Rh(111) and characterize them by scanning tunneling microscopy and X-ray photoelectron spectroscopy. We provide the first report of silica bilayer films on Rh(111) and have further successfully prepared fully closed films on Pt(111). Interestingly, surface and interface silicide phases play a decisive role in both cases: On platinum, closed films can be stabilized only when silicon is deposited in excess, which results in an interfacial silicide or silicate layer. We show that these silica films can also be grown directly from a surface silicide phase. In the case of rhodium, the silica phase is less stable and can be reduced to a silicide in reductive environments. Though similar in appearance to the “silicene” phases that have been controversially discussed on Ag(111), we conclude that an interpretation of the phase as a surface silicide is more consistent with our data. Finally, we show that the silica film on platinum is stable in 0.8 mbar CO but unstable at elevated temperatures. We thus conclude that these systems are only suitable as model catalyst supports to a limited extent.

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Thermal Decomposition Process of Ultrathin Oxide Layers on Si(100)

Cited by 3 publications

References 26 publications

Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy

Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy

Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires

Interface Effects in the Stability of 2D Silica, Silicide, and Silicene on Pt(111) and Rh(111)

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