Thermal decomposition of gallium nitrate hydrate Ga(NO3)3×xH2O

Berbenni, Vittorio; Milanese, Chiara; Bruni, Giovanna; Marini, Amedeo

doi:10.1007/s10973-005-0909-x

Cited by 51 publications

(36 citation statements)

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“…Stoichiometric amounts of cation nitrates—lanthanum nitrate hydrate, 99.99%, and gallium nitrate hydrate, 99.999%, for the LaGaO 3 , plus strontium nitrate hydrate, 99.9965%, and magnesium nitrate hydrate, 99.999%, for the LSGM (Alfa Aesar, Ward Hill, Massachusetts)—were added to ethylene glycol, after determining the water content in each nitrate by weight loss analysis. (Appropriate calcining temperatures for conversion to oxides, for the weight loss analysis, were obtained from literature reports of thermogravimetric analysis of each cation nitrate 34–37 …”

Section: Methodsmentioning

confidence: 99%

Temperature Dependence of Effective Grain Core/Single Crystal Dielectric Constants for Acceptor‐Doped Oxygen Ion Conductors

Perry

Yeh

Mason

2010

Journal of the American Ceramic Society

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Effective grain core or single crystal dielectric constants of four solid oxide electrolytes—yttria‐stabilized zirconia (YSZ with 8 and 7 mol% yttria), tetragonal zirconia polycrystals (TZP with 3 mol% yttria), strontium‐ and magnesium‐doped lanthanum gallate (LSGM), and gadolinia‐doped ceria (GDC, with 20 mol% gadolinia)—were studied as a function of temperature by AC‐impedance spectroscopy and equivalent circuit fitting. Unlike their undoped counterparts, the acceptor‐doped oxides consistently exhibited an upturn in effective grain core/single crystal dielectric constant in the vicinity of 350–500 K. This temperature‐dependent behavior was attributed to the onset of thermally activated dipolar relaxation—an explanation supported by the appearance of loss tangent peaks at higher temperatures. Differences between “effective” dielectric constants and frequency‐dependent complex dielectric constants for the grain core/single crystal frequency range, and applications of the effective dielectric constant data are discussed.

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Section: Methodsmentioning

confidence: 99%

Temperature Dependence of Effective Grain Core/Single Crystal Dielectric Constants for Acceptor‐Doped Oxygen Ion Conductors

Perry

Yeh

Mason

2010

Journal of the American Ceramic Society

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“…19 The two peaks near 1400 and 1340 cm À1 are assigned to stretches of adsorbed water-solvated nitrates. 20,21 These species are present before and after the 150 1C bake, but are completely removed following the 400 1C anneal, suggesting the films were completely converted to Ga 2Àx W x/2 O 3Àd and were free of water, hydroxyl and nitrates. The features observed in the range of 1400 to 650 cm À1 are likely due to slight variation in the data correction procedures (see Experimental details below) rather than actual absorption features.…”

Section: Structure and Composition Characterizationmentioning

confidence: 99%

Aqueous-based synthesis of gallium tungsten oxide thin film dielectrics

2015

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An aqueous-based approach to the deposition of gallium tungsten oxide thin film dielectrics was developed where the metal content (Ga 2Àx W x/2 O 3Àd , x = 0.31-0.66) can be controlled by the initial precursor concentrations, while the oxygen deficiency (d) can be controlled by post annealing. The spin-coated precursor converts to an amorphous oxide thin film with uniform distribution of metal cations after heating to 400 1C. The Ga 2Àx W x/2 O 3Àd band gap decreased with increasing W content from 4.9 eV for the undoped film (Ga 2 O 3 ) to 4.6 eV for the film with the highest W content (Ga 1.34 W 0.33 O 3Àd ). The electronic properties of the dielectric films significantly improved with incorporation of W, where a decrease in leakage current and an increase in breakdown field strength from 2.9 MV cm À1 (Ga 2 O 3 ) to 5.2 MV cm À1 (Ga 1.34 W 0.33 O 3Àd ) was observed. Prior studies have suggested that Ga 2Àx W x/2 O 3Àd thin films can form dense low-k dielectric materials, where the relative amount of W in the film can significantly modify the dielectric constant. However our studies found no significant decrease in the dielectric constant with W doping of Ga 2 O 3 . We found that annealing the films 4400 1C in air resulted in the formation of substoichiometric WO x and metallic W throughout the films which may complicate dielectric measurements.

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“…A novel synthesis procedure of both calcium ferrites (CaFe 2 O 4 and Ca 2 Fe 2 O 5 ) was proposed in Ref. [24], starting from mechanically activated mixtures of organic precursors (calcium citrate tetrahydrate and iron(III) oxalate hexahydrate). It has been shown that the mechanically pre-activated mixtures yield, after 18 h annealing at 1073 K (or 1023 K), Ca 2 Fe 2 O 5 (or CaFe 2 O 4 ).…”

Section: Introductionmentioning

confidence: 99%