Thermal decomposition of copper nitride thin films and dots formation by electron beam writing

Nosaka, Toshikazu; Masuda, Yoshitake; Okamoto, Akio; Ogawa, Soichi; Nakayama, Yoshikazu

doi:10.1016/s0169-4332(00)00681-4

Cited by 112 publications

(82 citation statements)

References 7 publications

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“…The radiation-induced decomposition of the material opens the possibility to use it for write-once optical data storage with a strong reflectivity contrast which allows for writing rates above 3 Mbits/s. Moreover, maskless laser writing enables the production of micrometric conductive dot and line patterns 15 having a signal speed higher than those based on Al, currently used in integrated circuits. Finally, Cu 3 N has been also suggested to be used as a barrier material in tunnel junctions, 16 as a substrate for the growth of single-crystals of porphyrins and of atomic nanowires 17 and as a good candidate for hybrid inorganic-organic solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300°C. Films were characterized by means of ion-beam analysis ͑IBMA͒, X-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, and spectroscopic ellipsometry techniques ͑SE͒. The data reveal that even when the total ͑integrated over the whole thickness͒ atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100°C. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO 3 crystal lattice forming a solid solution. The influence of nitrogen migration on the optical ͑electronic͒ properties of the films will be discussed.

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Section: Introductionmentioning

confidence: 99%

“…11͒ to 450°C. 15 Nevertheless, as far as we know, the physical mechanisms involved in the decomposition process have not been sufficiently investigated and, therefore, many questions remain still open. Does nitrogen diffuse when increasing the film temperature?…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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“…However, after both implantation treatments, the electrical resistivities of all samples were decreased to about 10 −4 m and there were no difference. One of the reasons would be that the copper nitride is so unstable 11) that the bonds between N and Al near the surface are destroyed during hydrogen ion irradiation even at 3 keV as well as helium ion irradiation. We analyzed the crystal structures of the hydrogen implanted Cu-N thin films by XRD and it made clear that the lattice constants of these samples are slightly but apparently decreased compared to those of the as-deposited Cu-N thin films.…”

Section: Copper Nitride (Cu-n) Thin Filmsmentioning

confidence: 99%

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

2002

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Copper and Aluminum Nitride thin films were prepared by the reactive R. F. sputtering method with controlling the N 2 gas content. Their electrical resistivity and optical bandgap energy were varied as the content of N 2 gas during the deposition. For example, the electrical resistivity of the copper nitride thin films increased from 10 −1 to 10 1 m as the nitride approaches to the stoichometric Cu 3 N. To modify the electrical and the optical properties of the nitride thin films, hydrogen was introduced by low energy ion implantation. The electrical resistivity of nearly stoichiometric Cu 3 N thin films decreased from 10 1 to 10 −4 m after hydrogen ion implantation for 30 minutes because this treatment at even 3 keV formed many irradiation defects near the surface of the Cu 3 N thin films. On the other hand, the electrical and the optical properties of insulating AlN thin films were hardly modified with the 7 h implantation. But the electrical resistivity and the optical bandgap energy of the Al rich Al-N thin films could be increased by the hydrogen ion implantation.

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“…Cu 3 N thin films are usually deposited by sputtering [4,5]. Being metastable [6], copper nitride easily decomposes into metallic copper and nitrogen by different techniques such as: thermal annealing [6][7][8][9], and irradiation with electrons and laser pulses [10][11][12][13]. More recently, the effect of swift heavy ion (SHI) irradiation [14][15][16] in which the electronic stopping power (S e ) is some orders of magnitude higher than the nuclear stopping power (S n ) is being investigated.…”

Section: Introductionmentioning

confidence: 99%

“…When the material decomposes, it simultaneously undergoes large changes in electrical resistivity and reflectivity which opens the possibility to use it for write-once optical data storage. Moreover, irradiation methods have been used to pattern the material producing sub-micrometric conductive dots and lines which have a signal speed higher than those usually used in integrated circuits [9]. SHI irradiation presents some clear advantages with respect to the other employed patterning techniques since energetic ions deposit their energy in the material by electronic excitation, forming structures (tracks) with nanometer lateral resolution [17,18].…”

Section: Introductionmentioning

confidence: 99%

Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Gordillo

González-Arrabal

Rivera

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Nitrogen sputtering yields as high as 10 4 atoms/ion, are obtained by irradiating N-rich-Cu 3 N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10-42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5-10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (S e ). A stopping power (S t j,) threshold of ~3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

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Thermal decomposition of copper nitride thin films and dots formation by electron beam writing

Cited by 112 publications

References 7 publications

Thermal stability of copper nitride thin films: The role of nitrogen migration

Thermal stability of copper nitride thin films: The role of nitrogen migration

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

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