Thermal conversion of Cu4O3 into CuO and Cu2O and the electrical properties of magnetron sputtered Cu4O3 thin films

Murali, Dhanya S; Subrahmanyam, A.

doi:10.1007/s00339-018-1666-6

Cited by 36 publications

(16 citation statements)

References 24 publications

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“…The activation energy was calculated as 0.10 and 0.20 eV at 100–180 and 190–370 K respectively, for the undoped Cu 4 O 3 , which lies in between those reported for CuO (0.12–0.16 eV) and Cu 2 O (0.20–0.24 eV) . It is also adjacent to the reported activation energy 0.14 eV of undoped Cu 4 O 3 although the measured temperature range was 190–300 K.…”

Section: Resultssupporting

confidence: 66%

Nitrogen Doping Effect in Cu₄O₃ Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Patwary

Saito

Guo

et al. 2019

Physica Status Solidi (b)

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N‐doped Cu4O3 thin films are deposited by radio frequency magnetron sputtering in an ambient of Ar, O2, and N2 using a pure Cu target. The structural, electrical, and optical properties are investigated systematically with the variation of N2 gas flow during deposition. Results reveal that N2 flow rate has a strong influence on both the composition and functional properties of the resulting Cu4O3 films. X‐ray diffraction (XRD) and Raman spectroscopy indicate the formation of the single phase of N‐doped Cu4O3 at a low N2 flow rate of up to 4.3 sccm. From the optical absorption analyses, both undoped and N‐doped Cu4O3 films show a direct forbidden transition at Eg = 1.34–1.44 eV. All the undoped and N‐doped Cu4O3 thin films show p‐type conductivity, and N‐doped Cu4O3 shows lower resistivity on the order of 101–102 Ω cm. These results indicate clearly that N‐doped Cu4O3 is a very promising material for the absorber in low‐cost thin film solar cells.

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Section: Resultssupporting

confidence: 66%

Nitrogen Doping Effect in Cu₄O₃ Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Patwary

Saito

Guo

et al. 2019

Physica Status Solidi (b)

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“…After substituting all required parameters such as an FWHM of 0.531, a crystalline size of 17 nm was calculated. The XRD analysis for the as‐deposited Cu 4 O 3 layer can be found in our recent article, which related well to the other reported literature …”

Section: Resultssupporting

confidence: 86%

Translucent Photodetector with Blended Nanowires–Metal Oxide Transparent Selective Electrode Utilizing Photovoltaic and Pyro‐Phototronic Coupling Effect

Abbas

Kumar

Kim

et al. 2019

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ZnO is a potential candidate for photodetection utilizing the pyroelectric effect. Here, a self‐biased and translucent photodetector with the configuration of Cu4O3/ZnO/FTO/Glass is designed and fabricated. In addition, the pyroelectric effect is effectively harvested using indium tin oxide (ITO), silver nanowires (AgNWs), and a blend of AgNWs‐coated ITO as the transparent selective contact electrode. The improved rise times are observed from 1400 µs (bare condition; without the selective electrode) to 69, 60, 7 µs, and fall times from 720 µs (bare condition) to 80, 70, 10 µs for corresponding ITO, AgNWs, and AgNWs‐coated ITO contact electrodes, respectively. Similarly, the responsivity and detectivity are enhanced by about 4.39 × 107 and 5.27 × 105%, respectively. An energy band diagram is proposed to explain the underlying working mechanism based on the workfunction of the ITO (4.7 eV) and AgNWs (4.57 eV) as measured by Kelvin probe force microscopy, which confirms the formation of type‐II band alignment resulting in the efficient transport of photogenerated charge carriers. The functional use of the transparent selective contact electrode can effectively harness the pyro‐phototronic effect for next‐generation transparent and flexible optoelectronic applications.

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“…Fig. 3 72 and Wang et al 71 The intensity of the (111) orientation is prominent for all our samples, and the annealing atmosphere does not drastically alter the orientation of the CuO phase in the lms. The dominating (111) orientation is typical for CuO lms when synthesized by thermal oxidation of Cu, or by transformation of a mixed oxide through heat treatment.…”

Section: X-ray Diffraction Analysissupporting

confidence: 57%

The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

et al. 2020

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Thermal conversion of Cu4O3 into CuO and Cu2O and the electrical properties of magnetron sputtered Cu4O3 thin films

Cited by 36 publications

References 24 publications

Nitrogen Doping Effect in Cu₄O₃ Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Nitrogen Doping Effect in Cu₄O₃ Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Translucent Photodetector with Blended Nanowires–Metal Oxide Transparent Selective Electrode Utilizing Photovoltaic and Pyro‐Phototronic Coupling Effect

The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

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Thermal conversion of Cu4O3 into CuO and Cu2O and the electrical properties of magnetron sputtered Cu4O3 thin films

Cited by 36 publications

References 24 publications

Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Translucent Photodetector with Blended Nanowires–Metal Oxide Transparent Selective Electrode Utilizing Photovoltaic and Pyro‐Phototronic Coupling Effect

The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

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Product

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Nitrogen Doping Effect in Cu₄O₃ Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Nitrogen Doping Effect in Cu₄O₃ Thin Films Fabricated by Radio Frequency Magnetron Sputtering