Thermal contact resistance between the surfaces of silicon and copper crucible during electron beam melting

Wen, Shutao; Tan, Yi; Shi, Shuang; Dong, Wei; Jiang, Dachuan; Liao, Jiao; Zhi, Zhang

doi:10.1016/j.ijthermalsci.2013.07.005

Cited by 18 publications

(5 citation statements)

References 15 publications

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“…In the case of the presence of undercooling, once the cell has nucleated, it will grow with a preferential direction relying on its crystallographic orientation. The growth rate is calculated by Equation (30), and the horizontal projection length of crystal growth l(t) can be given by (33) [25] …”

Section: Model For the Growth Of The Columnar Faceted Interfacementioning

confidence: 99%

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Cellular Automaton Modeling of the Transition of Multi-Crystalline Silicon from a Planar Faceted Front to Equiaxed Growth

Zhang

Wang

et al. 2017

Applied Sciences

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Abstract:A modeling approach combining the lattice Boltzmann (LB) method and the cellular automaton (CA) technique are developed to simulate the faceted front to equiaxed structure transition (FET) of directional solidification of multi-crystalline silicon. The LB method is used for the coupled calculation of velocity, temperature and solute content field, while the CA method is used to compute the nucleation at the silicon-crucible interface and on SiC particles, as well as the mechanism of growth and capturing. For silicon, the interface kinetic coefficient is rather low, which means that the kinetic undercooling can be large. A strong anisotropy in the surface tension and interfacial kinetics are considered in the model. A faceted front in conjunction with a sufficiently high carbon content can lead to equiaxed growth by nucleation on SiC. The temperature gradient in Si melt at the interface is negative, which leads to the occurrence of a faceted interface. The higher the absolute value of thermal gradients, the faster the growth velocity. Due to differences in the degree of undercooling, there will be the unification of facets in front of the solid-liquid interface. Transitions from faceted front to thermal equiaxed dendrites or faceted equiaxed grains are observed with smaller or larger impurity contents, respectively.

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Section: Model For the Growth Of The Columnar Faceted Interfacementioning

confidence: 99%

“…The physical properties used in the present computations are listed in Table 1 [ [29][30][31][32][33]. …”

Section: The Physical Parameters Of Silicon Meltmentioning

confidence: 99%

Cellular Automaton Modeling of the Transition of Multi-Crystalline Silicon from a Planar Faceted Front to Equiaxed Growth

Zhang

Wang

et al. 2017

Applied Sciences

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“…The physical properties used in the present computations are listed in Table 1 [ [20][21][22][23]. Table 1.…”

Section: Model Of Mc-si Ingot Growthmentioning

confidence: 99%

Numerical Simulation of Multi-Crystalline Silicon Crystal Growth Using a Macro–Micro Coupled Method during the Directional Solidification Process

Lian

Liu

et al. 2016

Applied Sciences

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Abstract:In this work, the crystal growth of multi-crystalline silicon (mc-Si) during the directional solidification process was studied using the cellular automaton method. The boundary heat transfer coefficient was adjusted to get a suitable temperature field and a high-quality mc-Si ingot. Under the conditions of top adiabatic and bottom constant heat flux, the shape of the crystal-melt interface changes from concave to convex with the decrease of the heat transfer coefficient on the side boundaries. In addition, the nuclei form at the bottom boundary while columnar crystals develop into silicon melt with amzigzag-faceted interface. The higher-energy silicon grains were merged into lower energy ones. In the end, the number of silicon grains decreases with the increase of crystal length.

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“…The contact asperities has been investigated for decades due to their significant importance in several branches of science and engineering such as surface science, 19–21 tribology, 22–24 heat transfer 25–28 and recently in Micro-Electro-Mechanical Systems (MEMS) 29–35 . Due to this significant importance, several models 36–41 are developed in order to provide information about their features such as contact asperity dimensions, number, distribution material properties, surface profiles and operating conditions.…”

Section: Introductionmentioning

confidence: 99%

A 3D contact analysis approach for the visualization of the electrical contact asperities

Roussos

Swingler

2017

AIP Advances

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The electrical contact is an important phenomenon that should be given into consideration to achieve better performance and long term reliability for the design of devices. Based upon this importance, the electrical contact interface has been visualized as a ‘‘3D Contact Map’’ and used in order to investigate the contact asperities. The contact asperities describe the structures above and below the contact spots (the contact spots define the 3D contact map) to the two conductors which make the contact system. The contact asperities require the discretization of the 3D microstructures of the contact system into voxels. A contact analysis approach has been developed and introduced in this paper which shows the way to the 3D visualization of the contact asperities of a given contact system. For the discretization of 3D microstructure of contact system into voxels, X-ray Computed Tomography (CT) method is used in order to collect the data of a 250 V, 16 A rated AC single pole rocker switch which is used as a contact system for investigation.

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Thermal contact resistance between the surfaces of silicon and copper crucible during electron beam melting

Cited by 18 publications

References 15 publications

Cellular Automaton Modeling of the Transition of Multi-Crystalline Silicon from a Planar Faceted Front to Equiaxed Growth

Cellular Automaton Modeling of the Transition of Multi-Crystalline Silicon from a Planar Faceted Front to Equiaxed Growth

Numerical Simulation of Multi-Crystalline Silicon Crystal Growth Using a Macro–Micro Coupled Method during the Directional Solidification Process

A 3D contact analysis approach for the visualization of the electrical contact asperities

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