2014
DOI: 10.1063/1.4861468
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Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

Abstract: Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m−1 K−1, is lower than the bulk basal plane value (390 W m−1 K−1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride gr… Show more

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Cited by 53 publications
(32 citation statements)
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“…Therefore, it is of great importance to improve the synthesis of BN nanosheets [4] Young's modulus 1.0 TPa [9,10] 0.71-0.97 TPa (theoretical) [5][6][7][8] Breaking strength 130 GPa [9,10] 120-165 GPa (theoretical) [5][6][7][8] Thermal conductivity 1800-5400 W m -1 K -1 [95,96] 100-270 W m -1 K -1 (few-layer) [11][12][13] Oxygen doping 250 °C [17] >700 °C [22] EtcEtching by oxidation 450 °C [17] >800 °C [22] Galvanic corrosion Yes [31,32] No [33] Protection barrier No [31,32] Yes [33] Reusable surfaceenhanced Raman spectroscopy substrate Many unique and exciting properties have been theoretically predicted for 1L BN and await experimental verifi cation, so they can act as guidance for future research in the fi eld.…”
Section: Discussionmentioning
confidence: 99%
“…Therefore, it is of great importance to improve the synthesis of BN nanosheets [4] Young's modulus 1.0 TPa [9,10] 0.71-0.97 TPa (theoretical) [5][6][7][8] Breaking strength 130 GPa [9,10] 120-165 GPa (theoretical) [5][6][7][8] Thermal conductivity 1800-5400 W m -1 K -1 [95,96] 100-270 W m -1 K -1 (few-layer) [11][12][13] Oxygen doping 250 °C [17] >700 °C [22] EtcEtching by oxidation 450 °C [17] >800 °C [22] Galvanic corrosion Yes [31,32] No [33] Protection barrier No [31,32] Yes [33] Reusable surfaceenhanced Raman spectroscopy substrate Many unique and exciting properties have been theoretically predicted for 1L BN and await experimental verifi cation, so they can act as guidance for future research in the fi eld.…”
Section: Discussionmentioning
confidence: 99%
“…The more recent interest in hBN has been motivated by the search for an electrically insulating counterpart of graphene suitable for thermal management applications [5,6]. Apart from excellent dielectric properties, few atomic layer hBN crystals demonstrated high values of thermal conductivity approaching that of the bulk value [7][8][9]. Considering the rare combination of the electrical insulating behaviour with exceptionally high thermal conductivity, hexagonal boron nitride is a promising candidate for the next-generation of thermal management material.…”
Section: Introductionmentioning
confidence: 99%
“…is the ambient temperature. For small temperature difference, h can be expressed as [43]: Grain size-induced thermo-mechanical coupling in zirconium thin films 1199…”
Section: Methodsmentioning
confidence: 99%