Thermal conductivity of SiO2 films by scanning thermal microscopy

High spatial resolution thermal conductivity of bulk ZnO (0001)

“…Several factors, such as the contact resistance between tip and probe, the temperature distribution along the tip, the contact force, the surrounding temperature, humidity, and gas are influencing the voltage reading when the tip is in contact with the specimen. 8,9 Since the calibration and measurements are performed under the exact same conditions, the only factor that differs from sample to sample is the surface topography. For a perfectly flat surface the contact between the probe tip ͑radius of curvature ϳ1 m͒ 6,7 and the surface is very small, with spatial resolutions higher than the actual tip dimension being reported for SThM scans.…”

Thermal conductivity measurement of submicrometer-scale silicon dioxide films by an extended micro-Raman method

“…In this experiment, the thickness of sample 1 was much larger than the laser beam diameter d and the silicon dioxide film thickness d was much smaller than the silicon substrate thickness and the laser beam diameter d. The thermal conductivity of silicon dioxide film K f as reported in literature (Callard et al 1999;Lambropoulos and Jolly 1989;Lee et al 1995) is much smaller than the thermal conductivity of the silicon substrate K s , which means the assumptions of the model above were all met. Thus, the thermal conductivity of silicon dioxide film K f can be obtained by Eq.…”

“…Besides, silicon dioxide films are also widely used as the electrical insulating layer in the IC industry, and the thermal characteristics of silicon dioxide film greatly impact the heat dissipation of the chips. So it is very important to investigate the thermal conductivity of silicon dioxide films and its measurement method for the research of both TEMS thermally insulated structures and heat dissipation in ICs (Callard et al 1999).…”

“…Till now, some measurement methods of thin film thermal conductivity have been reported, such as the steady-state method (Zhang and Gridgoropoulos 1995), 3x method (Yamane et al 2002;Lee et al 1995), photoacoustic and photothermal method (Swimm 1983;Yacoubi and Alibert 1991), thermal microscopy method (Callard et al 1999) and thermoreflectance method (Costescu et al 2003), etc. Both of the steady-state method and 3x method require depositing metal layer above the measured film, which may bear the risk of damaging and changing the properties of the measured film.…”

Effect of surface oxidation on thermal shock resistance of ZrB 2 –SiC–ZrC ceramic at temperature difference from 800 to 1900 °C

“…Therefore, the appearance of the compressive stress zone beneath the surface oxide layers is favorable to inhibit the crack initiation and propagation during the transient water quenching prior to final failure, which is beneficial to resistance to thermal shock because the thermal stress is counteracted partially due to the appearance of the compressive stress. (III) Compared with the high thermal conductivity (90-120 W m −1 K −1 ) [36] of the ZrB 2 -SiC-ZrC ceramic, the surface oxide layers of the low thermal conductivity (2-4 W m −1 K −1 ) [37,38] can act as the thermal barrier layer of the sample substrate. (IV) During the water quenching, the surface temperature of the oxide layers is reduced to the temperature of the water bath, whereas the surface of the sample substrate (close to interface between the oxide layer and the substrate) is still retained at higher temperature due to the low thermal conductivity of the oxide layers.…”