Thermal conductivity of SiC after heavy ions irradiation

Photothermal spectroscopy has found a wide range of applications as a method of monitoring thermal, optical and recombination parameters of semiconductors. We consider microphone detection, widely used in photoacoustic spectroscopy, and piezoelectric detection. Both methods require knowledge of the temperature distribution in the sample and in its surroundings, the support surface and gas. For the microphone signal, we simulated the temperature at one of the sample surfaces; for the piezoelectric signal, we simulated the spatial temperature distribution orthogonal to the sample surface. We modeled an idealized semiconducting sample and one with surface defects. We found that the amplitude and phase spectra vary between the methods, enabling determination of optical and thermal parameters.

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“…al. [30] investigated the influence of irradiation of heavy ions of SiC. Due to this procedure the layer of 10 µm was damaged.…”

Section: Corrections Of the Models In The Case Of The Presence Of Defmentioning

confidence: 99%

Comparison of Theoretical Basics of Microphone and Piezoelectric Photothermal Spectroscopy of Semiconductors

et al. 2016

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“…It is thus interesting to identify what could be the effect of the irradiation on the microstructure as a function of the depth in SiC. Yet, up to now, most studies on heavy ions irradiation have been based on global or local Raman measurements to characterize created defects . However, those methods do not allow acceding accurately to the detailed depth distribution of the irradiation damage.…”

Section: Introductionmentioning

confidence: 99%

Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Linez¹,

Canizarès²,

Gentils³

et al. 2012

J Raman Spectroscopy

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“…Because of working conditions planned for this reactor -high helium pressure, and high temperature (around 1000 °C in nominal operating conditions, and up to 1600-2000 °C in accidental scenario), refractory materials are required for the design of the fuel cladding. That is why many studies are conducted on carbides, as well for their development and the improvement of their properties [2][3][4], as to understand their behaviour under irradiation [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Formation of nanosized hills on Ti3SiC2 oxide layer irradiated with swift heavy ions

Nappé

Monnet

Audubert

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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In the framework of the Generation IV International Forum, carbides are sensed for the design of the fuel cladding of the Gas-cooled Fast Reactor. Among the studied carbides, Ti 3 SiC 2 has the advantage of combining the properties of both metals and ceramics. After performing irradiations with 92 MeV Xe ions to 10 19 m -2 , hills were observed by AFM on the surface of Ti 3 SiC 2 . Such topographic modification seems to have never been observed in other materials irradiated in such conditions. A characterization of these hills by both XPS and X-TEM highlighted that these surface modifications do not appear in Ti 3 SiC 2 but in a native amorphous oxide layer on the sample. Moreover, the thickness of this oxide layer grows under irradiation. The comparison between different irradiations permitted to conclude that this surface modification is due to electronic interactions in this amorphous layer, and a threshold in electronic stopping power for hill formation is evidenced.

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Thermal conductivity of SiC after heavy ions irradiation

Cited by 33 publications

References 23 publications

Comparison of Theoretical Basics of Microphone and Piezoelectric Photothermal Spectroscopy of Semiconductors

Comparison of Theoretical Basics of Microphone and Piezoelectric Photothermal Spectroscopy of Semiconductors

Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Formation of nanosized hills on Ti3SiC2 oxide layer irradiated with swift heavy ions

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