2008
DOI: 10.1063/1.3032602
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Thermal conductivity of Si/SiGe superlattice films

Abstract: We have evaluated the thermal conductivity of Si/SiGe superlattice films by theoretical analysis and experiment. In experiments, the ultrahigh vacuum chemical vapor deposition is employed to form the Si/ Si 0.71 Ge 0.29 and Si/ Si 0.8 Ge 0.2 superlattice films. The cross-plane thermal conductivities of these superlattice films are measured based on the 3 method. In the theoretical analysis, the phonon transport in Si/ Si 1−x Ge x superlattice film is explored by solving the phonon Boltzmann transport equation.… Show more

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Cited by 44 publications
(17 citation statements)
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“…Controlled experiments on Si nanowires indeed display the expected diffusive transport behavior, confirming the validity of our experiments (see the Appendix). The results of Si-Ge core-shell nanowires not only largely deviate from the indirect estimates that l < 100 nm for SiGe alloys [14,[28][29][30][31], but they are also much longer than l ∼ 1 μm proposed for the best thermal conductors like diamond and graphene [1]. The finding also highlights the impor- tance of our direct, rigorous, thermal transport measurements on l.…”
Section: Resultscontrasting
confidence: 64%
“…Controlled experiments on Si nanowires indeed display the expected diffusive transport behavior, confirming the validity of our experiments (see the Appendix). The results of Si-Ge core-shell nanowires not only largely deviate from the indirect estimates that l < 100 nm for SiGe alloys [14,[28][29][30][31], but they are also much longer than l ∼ 1 μm proposed for the best thermal conductors like diamond and graphene [1]. The finding also highlights the impor- tance of our direct, rigorous, thermal transport measurements on l.…”
Section: Resultscontrasting
confidence: 64%
“…The conductivity values measured at 300 K for the three samples considered in this work are shown in Fig. 3(b), accompanied by a comparison with other undoped SLs [9][10][11][12][13][14]. This figure illustrates the dependence of the thermal conductivity on the SL period.…”
Section: Resultsmentioning
confidence: 94%
“…2015, 8(9): 2833-2841 increases this value to 0.95 [7]. Additionally, the incorporation of a high interface density in epitaxial heterostructures has been recognized as an efficient approach to enhance boundary phonon scattering at low frequencies with a corresponding decrease in thermal conductivity [8][9][10][11][12][13][14][15][16][17]. SiGe planar superlattices (SLs) have thus emerged as potential candidates for both TE cooling of microelectronic devices and medium-temperature TE power generation [18,19].…”
Section: Introductionmentioning
confidence: 98%
“…7, see Table I for comparisons of literature values). Whilst there have been a significant number of publications investigating the thermal conductivity of Si/Ge and Si/SiGe superlattices, [18][19][20][21] there are far fewer publications investigating doped superlattices with sufficient results to quote ZT, power factors, or the output from a cooler. [22][23][24] To date these reported results for Si/Ge and Si/SiGe superlattices are only for n-type material (Ref.…”
Section: Introductionmentioning
confidence: 99%