Thermal Conductivity Measurements of Thin Aluminum Layers Using Steady State Joule Heating and Electrical Resistance Thermometry in Suspended Bridges

Reifenberg, John P.; Voß, Robert; Rao, P. Raja Ramana; Schmitt, Walter; Yang, Ying; Shojaei-Zadeh, Shahab; Liu, W.; Sadeghipour, Sadegh M.; Asheghi, Mehdi

doi:10.1115/imece2003-42055

Cited by 7 publications

(3 citation statements)

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“…Electrical resistance thermometry has been applied to measure the thermal conductivity of low dimensional solids (films, membranes, wires, and bridges) [13][14][15] in both direct [16][17][18][19][20] and modulated (1-omega, 2-omega, 3-omega) [21,22] current configurations. Electrical resistance thermometry is frequently chosen for its simplicity and the fact that suitable electrical contacts for testing are compatible with standard fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges

English

Phinney

Hopkins

et al. 2013

Journal of Heat Transfer

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Accurate thermal conductivity values are essential for the successful modeling, design, and thermal management of microelectromechanical systems (MEMS) and devices. However, the experimental technique best suited to measure the thermal conductivity of these systems, as well as the thermal conductivity itself varies with the device materials, fabrication processes, geometry, and operating conditions. In this study, the thermal conductivities of boron doped single-crystal silicon microbridges fabricated using silicon-on-insulator (SOI) wafers are measured over the temperature range from 80 to 350 K. The microbridges are 4.6 mm long, 125 ¡xm tall, and either 50 or 85 ¡im wide. Measurements on the 85 ßm wide microbridges are made using both steady-state electrical resistance thermometry (SSERT) and optical time-domain thermoreflectance (TDTR). A thermal conductivity of 77 Wm^' K~' is measured for both microbridge widths at room temperature, where the results of both experimental techniques agree. However, increasing discrepancies between the thermal conductivities measured by each technique are found with decreasing temperatures below 300 K. The reduction in thermal conductivity measured by TDTR is primarily attributed to a ballistic thermal resistance contributed by phonons with mean free patlis larger than the TDTR pump beam diameter. Boltzmann transport equation (BTE) modeling under the relaxation time approximation (RTA) is used to investigate the discrepancies and emphasizes the role of different interaction volumes in explaining the underprediction of TDTR measurements.

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Section: Introductionmentioning

confidence: 99%

Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges

English

Phinney

Hopkins

et al. 2013

Journal of Heat Transfer

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“…The heat conduction along the suspended nanowires is also expressed by equation (1) with no heat loss to the substrate (g=0). In this case, the average electrical resistance is given by [14,15]  …”

Section: Resultsmentioning

confidence: 99%

“…The thermal conductivity of nanowires were measured by 4-probe Steady-state DC Joule heating technique [14,15]. All measurements were performed under ambient environment at room temperature (295 K), and convective and radiative heat losses are neglected.…”

Section: Methodsmentioning

confidence: 99%

In-plane thermal conductivity measurement on nanoscale conductive materials with on-substrate device configuration

Kodama

Park

Marconnet

et al. 2012

13th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

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In this study, we measure the in-plane thermal conductivity of palladium (Pd) nanowire with varying length (3-50 m) and width (100-250 nm). The bridges are fabricated by electron beam lithography with an on-substrate measurement configuration. The measurements are performed on substrates with 190 nm and 2.9 μm thick thermal oxide using a 4-probe steady-state DC Joule heating method, and several suspended structure are also prepared to investigate the accuracy of the on-substrate results. For the on-substrate measurements, the thermal conductivity is estimated for short nanowires assuming the magnitude of the heat loss to the substrate from measurements of longer nanowires. As a result, the measured thermal conductivity is 30  5 W/mK for suspended short nanowires at room temperature, and the estimated thermal conductivity for the on-substrate samples are consistent with this value. The measurements on the substrate with 2.9 μm oxide result in small variations between samples (± 5 W/mK), while the results on 190 nm thick oxide has a larger variation and uncertainty (> ± 20 W/mK) due to the uncertainty in the magnitude of the heat loss to the substrate. Sufficient measurement accuracy is only achieved if the heat loss to the substrate can be estimated or measured with high accuracy.

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A low-cost MEMS tester for measuring single nanostructure's thermal conductivity

Zhang

et al. 2013

Sensors and Actuators A: Physical

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Thermal Conductivity Measurements of Thin Aluminum Layers Using Steady State Joule Heating and Electrical Resistance Thermometry in Suspended Bridges

Cited by 7 publications

References 0 publications

Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges

Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges

In-plane thermal conductivity measurement on nanoscale conductive materials with on-substrate device configuration

A low-cost MEMS tester for measuring single nanostructure's thermal conductivity

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