Thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry

Kuo, B. S. W.; Li, J. C. M.; Schmid, A. W.

doi:10.1007/bf00348399

Cited by 59 publications

(25 citation statements)

References 25 publications

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“…The predicted thermal conductivity accumulation demonstrates that the propagating contribution is negligible in our model, which is in accord with the experimental measurements. (b) Predicted thermal conductivity accumulation function for a-Si compared with experimental measurements by Regner et al and thin films fabricated by sputtering (Experiment A) [5,31,32] and chemical vapor deposition (Experiment B) [7,8,30,33]. The predicted thermal conductivity accumulation demonstrates that the propagating contribution is significant for a-Si.…”

Section: A Bulkmentioning

confidence: 86%

“…7(a) and 7(b) are experimental measurements of thin-film thermal conductivities. For a-Si, the experimental measurements are broadly grouped by sample preparation technique: (A) chemical vapor deposition [7,8,33] and (B) sputtering [5,31,32].…”

Section: B Accumulation Functionmentioning

confidence: 99%

“…The scaling for a-SiO 2 has only recently been measured, with evidence of ω −2 , ω −4 , and a second ω −2 regime as the mode frequency ω increases from 3.14 to 6.28 ×10 12 rads/s [25][26][27][28]. For a-Si, the scaling is not well understood, with temperature-dependent and film thickness-varying measurements suggesting both ω −2 and ω −4 scalings [4][5][6][7][8][9]23,24,[29][30][31][32][33][34]. Overall, experimental measurements of the temperature-varying and film-thicknessvarying thermal conductivity of a-Si show a large variation that depends on the deposition method and impurity concentration (e.g., H, C, and O) [7,8,35,36].…”

Section: Introductionmentioning

confidence: 99%

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Thermal conductivity accumulation in amorphous silica and amorphous silicon

2014

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We predict the properties of the propagating and nonpropagating vibrational modes in amorphous silica (a-SiO 2 ) and amorphous silicon (a-Si) and, from them, thermal conductivity accumulation functions. The calculations are performed using molecular dynamics simulations, lattice dynamics calculations, and theoretical models. For a-SiO 2 , the propagating modes contribute negligibly to thermal conductivity (6%), in agreement with the thermal conductivity accumulation measured by Regner et al. [Nat. Commun. 4, 1640]. For a-Si, propagating modes with mean-free paths up to 1 μm contribute 40% of the total thermal conductivity. The predicted contribution to thermal conductivity from nonpropagating modes and the total thermal conductivity for a-Si are in agreement with the measurements of Regner et al. The accumulation in the measurements, however, takes place over a narrower band of mean-free paths (100 nm-1 μm) than that predicted (10 nm-1 μm).

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Section: A Bulkmentioning

confidence: 86%

Section: B Accumulation Functionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal conductivity accumulation in amorphous silica and amorphous silicon

2014

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“…25 Moreover, through phonon scattering at interfaces, boundaries and imperfections, the nano-scale heterojunctions allow charge transport through tunneling and minimize the thermal conductivities. [26][27][28][29] By applying the conducting polymer in the low dimensional hybrids, the thermal conductivity can be largely reduced, while still permitting high electrical conductivity resulting in the enhancement of the figure of merit. The surface polarization has also been demonstrated as an additional driving force to diffuse charge carriers in vertical hybrid architecture for the development of Seebeck effects.…”

mentioning

confidence: 99%

Magneto-Seebeck effect in an ITO/PEDOT:PSS/Au thin-film device

et al. 2016

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This article reports giant magnetic field effects on the Seebeck coefficient by exerting a Lorentz force on charge diffusion based on vertical multi-layer ITO/PEDOT:PSS/Au thin-film devices. The Lorentz force, induced by an external magnetic field, changes the charge transport and consequently generates angular dependent magnetoresistance. The proposed mechanism of the magneto-Seebeck effect is proved by measuring the magnetoresistance at a parallel, 45o and perpendicular angle to the temperature gradient. The gradual change of the magnetoresistance from a parallel to perpendicular angle indicates that the Lorentz force is a key driving force to develop the magneto-Seebeck effect. Therefore, our experimental results demonstrate a magnetic approach to control the thermoelectric properties in organic materials.

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“…Petrovsky et al (1992) studied the influence of carrier recombination on the pulsed photothermal beam deflection signal in semiconductors, while Surnev and Ivanov (1992) investigated the thermal diffusivity measurements in semiconductors and the influence of the carrier diffusion and recombination. Kuo et al (1992) studied the thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry. On the other hand, Fournier et al (1986) studied the theoretical and experimental of photothermal investigation of transport in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

A study on photothermal waves in an unbounded semiconductor medium with cylindrical cavity

Hobiny

Abbas

2016

Mech Time-Depend Mater

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The theory of coupled plasma, thermal, and elastic waves was used to investigate the wave propagation on semiconductor material with cylindrical cavity during photothermoelastic process. An unbounded material, elastic semiconductor containing a cylindrical cavity with isotropic and homogeneous thermal and elastic properties has been considered. The inner surface of cavity is constrained, and the carrier density is photogenerated by an exponentially decaying pulse boundary heat flux. The eigenvalue approach, together with Laplace transform techniques, was used to obtain the analytical solutions. Numerical computations have been done for a silicon-like semiconductor material, and the results are presented graphically to estimate the effect of the coupling between the plasma, thermal, and elastic waves. The graphical results indicate that the thermal activation coupling parameter is an important phenomenon and has a great effect on the distribution of field quantities.

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Thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry

Cited by 59 publications

References 25 publications

Thermal conductivity accumulation in amorphous silica and amorphous silicon

Thermal conductivity accumulation in amorphous silica and amorphous silicon

Magneto-Seebeck effect in an ITO/PEDOT:PSS/Au thin-film device

A study on photothermal waves in an unbounded semiconductor medium with cylindrical cavity

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