Thermal conductance of silicon interfaces directly bonded by room-temperature surface activation

Sakata, Masanori; Oyake, Takafumi; Maire, Jérémie; Nomura, Masahiro; Higurashi, Eiji; Shiomi, Junichiro

doi:10.1063/1.4913675

Cited by 22 publications

(16 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The agreement suggests that the constructive phonon interference is suppressed by the aperiodic structure, and the phonon transmission approaches the incoherent phonon-transport limit, leading to the minimum ITC. 14 In conclusion, we have identified the Si/Ge-composite interfacial structures that minimize/maximize the ITC across Si-Si and Si-Ge interfaces by the developed framework combining atomistic Green's function and Bayesian optimization methods.…”

Section: Figures 1 (G) and (H) Compare The Phonon Transmission Functimentioning

confidence: 99%

See 1 more Smart Citation

Designing Nanostructures for Phonon Transport via Bayesian Optimization

et al. 2017

Self Cite

View full text Add to dashboard Cite

We demonstrate optimization of thermal conductance across nanostructures by developing a method combining atomistic Green's function and Bayesian optimization.With an aim to minimize and maximize the interfacial thermal conductance (ITC) across Si-Si and Si-Ge interfaces by means of Si/Ge composite interfacial structure, the method identifies the optimal structures from calculations of only a few percent of the entire candidates (over 60,000 structures). The obtained optimal interfacial structures are non-intuitive and impacting: the minimum-ITC structure is an aperiodic superlattice 2 that realizes 50% reduction from the best periodic superlattice. The physical mechanism of the minimum ITC can be understood in terms of crossover of the two effects on phonon transport: as the layer thickness in superlattice increases, the impact of Fabry-Pérot interference increases, and the rate of reflection at the layer-interfaces decreases.Aperiodic superlattice with spatial variation in the layer thickness has a degree of freedom to realize optimal balance between the above two competing mechanism.Furthermore, aperiodicity breaks the constructive phonon interference between the interfaces inhibiting the coherent phonon transport. The present work shows the effectiveness and advantage of material informatics in designing nanostructures to control heat conduction, which can be extended to other interfacial structures.

show abstract

Section: Figures 1 (G) and (H) Compare The Phonon Transmission Functimentioning

confidence: 99%

“…In other words, the heat conduction becomes controllable through manipulating the interface structure. Various individual factors for tuning the ITC have been reported, such as roughness [8,9], vacancy defects [10], lattice orientation [11,12], nanoinclusions [13], and interfacial adhesion or bonding [14,15].…”

mentioning

confidence: 99%

Designing Nanostructures for Phonon Transport via Bayesian Optimization

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…Nanometer-scale structures, or nanostructures, of bonding interfaces have been examined using a transmission electron microscope (TEM). It was reported that amorphous-like transition layers were formed at the bonding interfaces [18,19]. The chemical properties, or properties of atomic bonds, of interfaces, however, have not yet been fully understood although the electrical properties of interfaces are likely to be strongly influenced by their chemical properties.…”

mentioning

confidence: 99%

Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding

yamajo

Yoon

Liang

et al. 2019

Applied Surface Science

View full text Add to dashboard Cite

Hard x-ray photoelectron spectroscopy measurements are performed on ≈10-nm-thick GaAs film/Si substrate junctions fabricated by the surface activated bonding and selective wet etching. The chemical shifts of Ga-O and As-O signals in Ga 2p 3/2 and As 2p 3/2 core spectra indicate that oxides are formed in a part of GaAs films neighboring GaAs/Si interfaces due to the surface activation process. Analyses of Ga-O and As-O signals show that the thickness of such buried oxides is decreased due to a post-bonding annealing at temperatures up to 400 ℃. This means that the electrical properties of bonding interfaces, which are in the meta-stable states, are improved by the annealing. The thickness of oxides is different from that of amorphous-like transition layers at the GaAs/Si interfaces observed by transmission electron microscopy.

show abstract

“…It has been reported that the TBR of an Si interface fabricated by SAB is equivalent to the thermal resistance of micrometerthick bulk Si. 22 Furthermore, the TBR could be greatly improved by the annealing process due to the recrystallization of the amorphous layer formed at the interface. We have previously reported the direct bonding of diamond and Al, and Cu at room temperature by surface activated bonding (SAB) and demonstrated the thermal stability of their bonding interfaces.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

Liang

Ohno

Yamashita

et al. 2020

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

The microstructures of Cu/diamond interfaces prepared by surface-activated bonding at room temperature are examined by cross-sectional scanning transmission electron microscopy (STEM). A crystalline defect layer composed of Cu and diamond with a thickness of approximately 4.5 nm is formed at the as-bonded interface, which is introduced by irradiation with an Ar beam during the bonding process. No crystalline defect layer is observed at the 700 °C-annealed interface, which is attributed to the recrystallization of the defect layer due to the high-temperature annealing process.Instead of the defect layer, a mating interface layer and a copper oxide layer are formed at the interface.The mating interface layer and the copper oxide layer play a role in relieving the residual stress caused by the different thermal expansion coefficients of diamond and Cu. The thermal boundary resistance (TBR) of the as-bonded interface is measured to be 1.7± 0.2×10 -8 m 2 K/W by the time domain pulsedlight-heating thermoreflectance technique, and this value is virtually the same as the theoretical calculation value. These results indicate that the direct bonding of diamond and Cu is a very effective technique for improving the heat-dissipation performance of power devices.

show abstract

Thermal conductance of silicon interfaces directly bonded by room-temperature surface activation

Cited by 22 publications

References 34 publications

Designing Nanostructures for Phonon Transport via Bayesian Optimization

Designing Nanostructures for Phonon Transport via Bayesian Optimization

Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding

Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

Contact Info

Product

Resources

About