Abstract:The -band structure of one-dimensional carbon nanotubes is very special. Their ballistic transport properties are studied theoretically and are found to exhibit rich magnetic-flux-dependent structures. The thermal conductance () has many step structures caused by the Zeeman splitting; a similar effect has been found in the electrical conductance G(). The Peltier coefficient ⌸() vanishes in the zero-voltage limit at any magnetic flux due to the symmetric -band structure about the chemical potential ϭ0. However,… Show more
“…According to the Landauer-Buttiker theory, 45 in 1D GNRs, the net electric and thermal conductance could exhibit the quantized phenomena. 46 At very low temperature, the electrical and thermal conductance are proportional to the number of 1D subbands intersecting with the chemical potential. The energy gap could be easily modified by the electric field strength and direction so that the MST would occur in certain ranges of electric field strengths and directions.…”
In the presence of electric fields, the low-energy electronic properties of AB-stacked few-layer graphene nanoribbons are studied by using the tight-binding model. They are strongly dependent on the geometric structures ͑the interlayer interactions, the ribbon edges, the ribbon width N y , and the ribbon number N z ͒ and the field strength. The interlayer interactions significantly affect density of states ͑DOS͒, energy gap ͑E g ͒, band structure, and free carriers. DOS exhibits many special structures including plateau, discontinuities, and divergent peaks. The effective electric field modifies the energy dispersions, alters the subband spacing, changes the subband curvature, produces the new edge state, switches the band gap, and causes the metal-semiconductor ͑or semiconductor-metal͒ transitions. In gapless zigzag ribbons, electric fields not only lifts the degeneracy of partial flatbands at E F but also induces an energy gap. E g is dependent on the ribbon width, ribbon edges, and the field strength. The semiconductor-metal transitions occur in both armchair ribbons and zigzag ribbons in the increase in electric fields. Due to electric fields, the above-mentioned effects are completely reflected in the features of DOS, such as the generation of special structures, the shift of peak position, the change in peak height, and the alternation of band gap. The predicted electronic properties could be examined by the experimental measurements on absorption spectra and transport properties.
“…According to the Landauer-Buttiker theory, 45 in 1D GNRs, the net electric and thermal conductance could exhibit the quantized phenomena. 46 At very low temperature, the electrical and thermal conductance are proportional to the number of 1D subbands intersecting with the chemical potential. The energy gap could be easily modified by the electric field strength and direction so that the MST would occur in certain ranges of electric field strengths and directions.…”
In the presence of electric fields, the low-energy electronic properties of AB-stacked few-layer graphene nanoribbons are studied by using the tight-binding model. They are strongly dependent on the geometric structures ͑the interlayer interactions, the ribbon edges, the ribbon width N y , and the ribbon number N z ͒ and the field strength. The interlayer interactions significantly affect density of states ͑DOS͒, energy gap ͑E g ͒, band structure, and free carriers. DOS exhibits many special structures including plateau, discontinuities, and divergent peaks. The effective electric field modifies the energy dispersions, alters the subband spacing, changes the subband curvature, produces the new edge state, switches the band gap, and causes the metal-semiconductor ͑or semiconductor-metal͒ transitions. In gapless zigzag ribbons, electric fields not only lifts the degeneracy of partial flatbands at E F but also induces an energy gap. E g is dependent on the ribbon width, ribbon edges, and the field strength. The semiconductor-metal transitions occur in both armchair ribbons and zigzag ribbons in the increase in electric fields. Due to electric fields, the above-mentioned effects are completely reflected in the features of DOS, such as the generation of special structures, the shift of peak position, the change in peak height, and the alternation of band gap. The predicted electronic properties could be examined by the experimental measurements on absorption spectra and transport properties.
“…In bulk systems, transport in the presence of electrical and thermal gradients is a well studied phenomenon. Recently, it became possible to study those effects, both experimentally and theoretically, in atomic-scale systems, like quantum point contacts [14,15], quantum dots [16]- [21], quantum dot superlattices [22], quantum wires with end atoms coupled to external leads [23], carbon nanotubes [24,25] or correlated multilayered nanostructures [26].…”
We study thermoelectric properties of the system composed of a monoatomic chain on a surface and additional electrode coupled to the chain, which can be an STM tip. In particular, we are interested in thermopower, electric and thermal conductance, Wiedemann-Franz relation and thermoelectric figure of merit, which is a direct measure of the usefulness of the system for applications. We discuss the modifications of the STM wire topography due to temperature gradient between the electrodes. Finally, we also make connection to STM experiment, in which the thermopower has been directly measured, showing different structure, not visible in topography spectra.
“…The sign reversal of α versus the sign of VG formerly observed experimentally is interpreted in this work in terms of so-called chiral tunneling phenomena (Klein paradox). Physics of the heat transfer determines functionality, precision and effectiveness of solid state nanocoolers [1,2,3,5] which are environment friendly and have a lot of applications in the experimental physics, nanoelectronics, chemistry, industry and medicine. Therefore exploiting of new thermoelectric materials with high figures of merit Z · T (T being the temperature) attracts a lot of attention.…”
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confidence: 99%
“…-Physics of the heat transfer determines functionality, precision and effectiveness of solidstate nanocoolers which are environment friendly and have a lot of applications in the experimental physics, nanoelectronics, chemistry, industry, and medicine. Therefore exploiting of new thermoelectric materials with high figures of merit attracts a lot of attention [1][2][3][4]. Recently such interest arose toward the carbon tube and graphene junctions which electronic properties are highly unconventional [4][5][6][7][8][9][10].…”
Microscopic mechanisms of externally controlled reversable heat flow through the carbon nanotube junctions (NJ) are studied theoretically. Our model suggests that the heat is transfered along the tube section T by electrons (e) and holes (h) moving ballistically in either in parallel or in opposite directions and accelerated by the bias source-drain voltage VSD (Peltier effect). We compute the Seebeck coefficient α, electric σ and thermal κ conductivities and find that their magnitudes strongly depend on VSD and VG. The sign reversal of α versus the sign of VG formerly observed experimentally is interpreted in this work in terms of so-called chiral tunneling phenomena (Klein paradox).PACS numbers: 73.23. Hk, 73.63.Kv, 73.40.Gk Physics of the heat transfer determines functionality, precision and effectiveness of solid state nanocoolers [1,2,3,5] which are environment friendly and have a lot of applications in the experimental physics, nanoelectronics, chemistry, industry and medicine. Therefore exploiting of new thermoelectric materials with high figures of merit Z · T (T being the temperature) attracts a lot of attention. Recently such interest arose toward the carbon nanotube and graphene junctions which electronic properties are highly unconventional [5]. The thermoelectric power experiments [5] addressed single wall carbon nanotube junctions. In Ref.[5] a temperature difference ∆T induced a finite bias voltage ∆V p across the junction which sign changed versus the gate voltage V G . A question here is how that unconventional thermoelectric behavior is related to the intrinsic nature of the carbon nanotube and graphene? It is widely accepted that the charge carrier motion in carbon nanotubes and in graphene is essentially phase-correllated. For such a reason the conducting electrons and holes in that materials behave as relativistic massless 'chiral fermions' (CF) characterized by a 'pseudospin' (see review [6] and references thereis).In this Letter we argue that the phase-correlated thermoelectric transport of charge carriers implicates a voltage-controlled and reversable heat flow through the single wall carbon nanotube junctions (Peltier effect). The enhancement of Z · T in those 1D devices where the charge carriers propagate ballistically occurs due to strong van Hove singularities (VHS). The VHS position is tuned by the gate voltage V G in respect to the Fermi level ε F of the electrodes. When an VHS and ε F match each other, it results in a sufficient density of charge carriers which contribute to the electric conductivity despite the Fermi energy itself is relatively small. A finite gate voltage V G = 0 is not just merely supplies either the electrons or holes into T , but rather creates a potential barrier (U 0 > 0) or well (U 0 < 0) for chiral fermions transmitted across the junction as illustarted in Figs across the junction tilts the chiral barrier and causes the electric charge carriers to accelerate. This means that the energy of the charge carriers changes by δ = eV SD , which inflicts a local...
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