Thermal chemical vapor deposition of copper from hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane: kinetic studies

Nucleation and film growth during copper chemical vapor deposition using the precursor Cu(TMVS)(hfac)

“…1,2 The demand for new interconnect materials and associated processes is increasing as device features are scaled down. 11,12 Cu͑TMVS͒͑hfac͒ 13 ͑where TMVS is trimethylvinylsilane and hfac is 1,1,1,5,5,5-hexafluoroacetylacetonate͒ is the most widely used Cu͑I͒ precursor. 3-8 The cost savings and IC performance increases due to Cu introduction will be more fully realized if deep subquarter micron, high aspect ratio, features can be filled inexpensively with barrier material and copper.…”

“…12,14 Disproportionation of Cu͑hfac) ϩ produces pure Cu films and Cu II (hfac) 2 . 12,14 Disproportionation of Cu͑hfac) ϩ produces pure Cu films and Cu II (hfac) 2 .…”

Surface Kinetics Model for SiLK Chemical Mechanical Polishing

“…29 L-H kinetics has also been used to model the growth and etching of germanium, copper, and silicon dioxide films by CVD. [30][31][32][33][34] In typical heterogeneous catalysis, gasphase molecules travel to a catalytic surface and become bound to catalyst surface sites. Neighboring molecules react, forming products on the catalyst surface, after which the products desorb to leave behind a vacant catalytic site.…”

Energetics of Copper Deposition Based on Cu(I) Precursors

“…More recent studies include the effects of carrier gas 17 and water vapor, 18 and the dependence of the resistivity on the surface roughness 19 and microstructure. 20 Naik et al studied the role of hydrogen in the copper deposition 21 and showed that Cu(hfac) 2 is a product over a wide temperature from 130 to 235ЊC. 22 Peterson et al 23 showed that direct liquid coinjection is an effective method for enhancing deposition rates and for producing high quality copper films from Cu(I) precursors.…”