Thermal Characterization of Tungsten Thin Films by Pulsed Photothermal Radiometry

Martan, J.; Semmar, Nadjib; Boulmer‐Leborgne, Chantal; Plantin, Pascale; Menn, E. Le

doi:10.1080/15567260601009189

Cited by 20 publications

(12 citation statements)

References 27 publications

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“…In the third and fourth steps, measurements are done on W/macro-Si (sample 3) and Ti/meso-Si (sample 4) in order to determinate the thermal conductivity of the two types of porous silicon. Notice that the optical absorptivity coecient of W is similar to Ti in the UV range and investigation of W thin lm was already done by our group using the photothermal method [16].…”

Section: Absorbing Layer Were Deposited On Samples By Physical Vapor mentioning

confidence: 97%

“…The electrical resistance thermometry or the 3 omega methods can also be cited as reliable techniques for a multi-layer thermal properties investigations [13,14]. In this work, the apparent thermal conductivity of two types of porous Si is determined by the photothermal nanosecond method [15,16]. The rst one is fabricated with the sintering technique with pores diameter varying between 100 nm and 1000 nm [17] and the other one has its pores diameter very small, varying between 5 nm and 10 nm and it has been elaborated by electrochemical etching [18].…”

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confidence: 99%

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Thermal conductivity measurement of porous silicon by the pulsed-photothermal method

Amin-Chalhoub¹,

Semmar²,

Coudron³

et al. 2011

J. Phys. D: Appl. Phys.

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Thermal properties of two types of porous silicon are studied using the pulsed-photothermal method (PPT). This method is based on a pulsed-laser source in the nanosecond regime. A 1D analytical model is coupled with the PPT technique in order to determinate thermal properties of the studied samples (thermal conductivity and volumetric heat capacity). At rst, a bulk single crystal silicon sample and a titanium thin lm deposited on a single crystal silicon substrate are studied in order to validate the PPT method. Porous silicon samples are elaborated with two dierent techniques, the sintering technique for macroporous silicon and electrochemical etching method for mesoporous silicon. Metallic thin lms are deposited on these two substrates by magnetron sputtering. Finally, the thermal properties of macroporous (30% of porosity and pores diameter between 100 nm and 1000 nm) and mesoporous silicon (30% and 15% of porosity and pores diameter between 5 nm and 10 nm) are determined in this work and it is found that thermal conductivity of macroporous (73 W.m-1 .K-1) and mesoporous (between 80 and 50 W.m-1 .K-1) silicon is two times lower than the single crystal silicon (140 W.m-1 .K-1).

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Section: Absorbing Layer Were Deposited On Samples By Physical Vapor mentioning

confidence: 97%

mentioning

confidence: 99%

Thermal conductivity measurement of porous silicon by the pulsed-photothermal method

Amin-Chalhoub¹,

Semmar²,

Coudron³

et al. 2011

J. Phys. D: Appl. Phys.

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“…To simplify the heat transfer analysis, the steady-state heat transfer is considered by setting the time derivative component as zero. This equation has been proved valid for a nanoscale material system, however, the parameter of thermal conductivity needs to be modified accordingly for thin films [53][54][55][56]. It has been theoretically and experimentally pointed out that the thermal conductivity of a thin film at the nanoscale dramatically decreases since the interfacial scattering effects between similar or dissimilar materials inside the structure significantly impede the vibrational energy transfer across the interfaces [55].…”

Section: Thermal Analysis For Absorbers and Energy Conversion Efficiementioning

confidence: 99%

“…To simplify the problem, specific heat capacity and density can still be the same as bulk material. Thermal parameters used in this work are listed in Table 1 [53][54][55][56]. To solve the heat transfer problem, proper boundary conditions are imposed on the designed metamaterial absorber.…”

Section: Thermal Analysis For Absorbers and Energy Conversion Efficiementioning

confidence: 99%

Wavelength-selective mid-infrared metamaterial absorbers with multiple tungsten cross resonators

Li¹,

Stan²,

Czaplewski³

et al. 2018

Opt. Express

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Wavelength-selective metamaterial absorbers in the mid-infrared range are demonstrated by using multiple tungsten cross resonators. By adjusting the geometrical parameters of cross resonators in single-sized unit cells, near-perfect absorption with single absorption peak tunable from 3.5 µm to 5.5 µm is realized. The combination of two, three, or four cross resonators of different sizes in one unit cell enables broadband near-perfect absorption at mid-infrared range. The obtained absorption spectra exhibit omnidirectionality and weak dependence on incident polarization. The underlying mechanism of near-perfect absorption with cross resonators is further explained by the optical mode analysis, dispersion relation and equivalent RLC circuit model. Moreover, thermal analysis is performed to study the heat generation and temperature increase in the cross resonator absorbers, while the energy conversion efficiency is calculated for the thermophotovoltaic system made of the cross resonator thermal emitters and low-bandgap semiconductors.

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“…Using the present system, the thermal properties of tungsten thin films were investigated [22]. Four samples were prepared under two different deposition conditions of magnetron sputtering (different argon pressures of 1 and 0.28 Pa), and with different thicknesses (0.5 and 1.3 µm).…”

Section: Emissivity Of Tungsten Thin Filmsmentioning

confidence: 99%

IR Radiometry Optical System View Factor and Its Application to Emissivity Investigations of Solid and Liquid Phases

2007

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An optical system for fast IR radiometry designed for investigations of thin film thermal properties and pulsed laser melting was analyzed in this work. A methodology for determination of the view factor from calibration measurements was developed. The view factor (0.0255) of the optical system containing two paraboloid mirrors was determined experimentally from calibration measurements on pure metals and metallic alloys. The knowledge of the view factor was then applied to normal emissivity investigations at IR wavelengths. The emissivity of tungsten films prepared by magnetron sputtering was determined for different deposition conditions, varying between 0.036 and 0.071. Liquid phase emissivities of Cu, Mo, Ni, Si, Sn, Ti, and steel were also determined and were found to be higher than solid-state emissivities as predicted from the literature. A knowledge of the liquid-state emissivity of silicon enabled recalculation of the IR signal evolution to the temperature evolution, during and after a nanosecond laser pulse. This was not possible by use of the usual calibration because of silicon's semi-transparent behavior in the IR range (1-10 µm) in the solidstate phase.

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Thermal Characterization of Tungsten Thin Films by Pulsed Photothermal Radiometry

Cited by 20 publications

References 27 publications

Thermal conductivity measurement of porous silicon by the pulsed-photothermal method

Thermal conductivity measurement of porous silicon by the pulsed-photothermal method

Wavelength-selective mid-infrared metamaterial absorbers with multiple tungsten cross resonators

IR Radiometry Optical System View Factor and Its Application to Emissivity Investigations of Solid and Liquid Phases

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