1976
DOI: 10.1109/t-ed.1976.18495
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Thermal characterization of power transistors

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Cited by 104 publications
(24 citation statements)
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“…Due to the relatively slow dynamics of thermal phenomena, the power device exhibits a very different small-signal behavior when considering frequencies well below (i.e., nearly dc) and well above (e.g., 1 kHz) the cutoff frequency of thermal phenomena [6]. Since the proposed approach is based on this important difference, the small-signal resistances at the two outlined frequencies are now computed according to (1). These two different resistances will be referred to in the following as and , respectively.…”
Section: Measurement Techniquementioning
confidence: 99%
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“…Due to the relatively slow dynamics of thermal phenomena, the power device exhibits a very different small-signal behavior when considering frequencies well below (i.e., nearly dc) and well above (e.g., 1 kHz) the cutoff frequency of thermal phenomena [6]. Since the proposed approach is based on this important difference, the small-signal resistances at the two outlined frequencies are now computed according to (1). These two different resistances will be referred to in the following as and , respectively.…”
Section: Measurement Techniquementioning
confidence: 99%
“…In this case, can be interpreted as the average temperature of the MOSFET channel. Clearly, (9) may be treated analogously to (1), and all the theoretical developments for the single port device may be repeated for the two-port device by simply replacing , with the voltage and current at the output port of the power transistor. Thus, (8) can be directly used for the evaluation of the thermal resistance of power transistors.…”
Section: Measurement Techniquementioning
confidence: 99%
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