Thermal Burnout Effect of a GaAs PHEMT LNA Caused by Repetitive Microwave Pulses

Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes

“…In the numerical simulation of the electromagnetic effect of microwave devices, the maximum temperature criterion in a semiconductor device as the melting point of the specific semiconductor material or electrodes is usually used to determine a burnout phenomenon in the simulation 11 , 17 – 20 . Therefore, the burnout power thresholds of the PIN limiters are at first simulated based on the peak temperature inside the device reaching the melting point of the material (silicon = 1688 K), as shown in Fig.…”

Impact of The Structure on The Thermal Burnout Effect Induced by Microwave Pulses of PIN Limiter Diodes

“…In the numerical simulation of the electromagnetic effect of microwave devices, the maximum temperature criterion in a semiconductor device as the melting point of the specific semiconductor material or electrodes is usually used to determine a burnout phenomenon in the simulation. 11,[16][17][18][19] Therefore, the burnout power thresholds of the PIN limiters are at first simulated based on the peak temperature inside the device reaching the melting point of the material (silicon=1688K), as…”

“…It is noteworthy that the use of a microwave power limiter generally leads to additional insertion loss in a receiver, which increases its noise figure and reduces its dynamic range. 16 This insertion loss is an important indicator of the microwave power limiters and can be used to evaluate the degree of damage to PIN limiters. In the effect experiment, the limiter insertion loss change of 3dB was used as the damage criterion, and the conventional HPM pulse parameters (the repetition frequency is 20Hz, the action time is 5s) were selected for the experiments.…”

A Thermal Failure Model for MOSFETs Under Repetitive Electromagnetic Pulses

“…The drift and diffusion model [28] (DDM) is widely used to describe the behavior of carriers in semiconductor devices [29]- [32]. When the quantum effect of carrier is not significant, the model can accurately describe the response and electro-thermal process of the device.…”

“…Numerical simulations are used to study the thermal effect of semiconductor devices [29]. Commercial software and selfdeveloped programs base on DDM are used to solve the PDEs of devices [30] [32]. Here, numerical simulations are taken to verify the failure model by a TCAD simulator GSRES (the General Simulator of Radiation Effect of Semiconductor) [40], which is developed by our team to study the electromagnetic radiation effect on electronic devices and circuits.…”