Thermal buckling of silicon capacitive pressure sensor

Ettouhami, Aziz; Essaid, A.; Ouakrim, N.; Michel, Lutz P.; Limouri, M.

doi:10.1016/s0924-4247(97)80109-4

Cited by 17 publications

(11 citation statements)

References 4 publications

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“…[112][113][114] Several papers have explored out-of-plane buckling as a prospective sensing mechanism. [115][116][117][118][119] It should also be mentioned that theoretical studies have recognized buckling as a possible sensing mechanism that is incredibly sensitive, but has a very small sensing range due to the discrete nature of buckling. [115,116] Sensitivity could be an order of magnitude higher than that of conventional linear transduction, such as microcantilevers, with micrometer deflections over incredibly small ranges.…”

Section: Polymeric Thermal-buckling-based Sensor Arraysmentioning

confidence: 99%

Bioinspired Material Approaches to Sensing

McConney¹,

Anderson²,

Brott

et al. 2009

Adv Funct Materials

102

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Bioinspired design is an engineering approach that involves working to understand the design principles and strategies employed by biology in order to benefit the development of engineered systems. From a materials perspective, biology offers an almost limitless source of novel approaches capable of arousing innovation in every aspect of materials, including fabrication, design, and functionality. Here, recent and ongoing work on the study of bioinspired materials for sensing applications is presented. Work presented includes the study of fish flow receptor structures and the subsequent development of similar structures to improve flow sensor performance. The study of spider air‐flow receptors and the development of a spider‐inspired flexible hair is also discussed. Lastly, the development of flexible membrane based infrared sensors, highly influenced by the fire beetle, is presented, where a pneumatic mechanism and a thermal‐expansion stress‐mediated buckling‐based mechanism are investigated. Other areas that are discussed include novel biological signal filtering mechanisms and reciprocal benefits offered through applying the biology lessons to engineered systems.

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Section: Polymeric Thermal-buckling-based Sensor Arraysmentioning

confidence: 99%

Bioinspired Material Approaches to Sensing

McConney¹,

Anderson²,

Brott

et al. 2009

Adv Funct Materials

102

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“…In addition, our process induces a minimal stress on both wafers, as the total thermal expansion of Si and Pyrex wafers of same thickness is equal when cooled over the 270 to 20 C range. 14 Moreover, a process temperature less than 300 C allows metals to remain functional after the bonding process, which is a prerequisite for electronics-to-microfluidics integration. 9, 15 We have tested specially designed pad-to-pad electrode structures in devices fabricated with this technology and found that the electrodes were functional with 1.5% coefficient of variation in measured DC resistance (see ESI, Fig.…”

Section: Resultsmentioning

confidence: 99%

Parylene to silicon nitride bonding for post-integration of high pressure microfluidics to CMOS devices

Çiftlik

Gijs

2012

Lab Chip

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High pressure-rated channels allow microfluidic assays to be performed on a smaller footprint while keeping the throughput, thanks to the higher enabled flow rates, opening up perspectives for cost-effective integration of CMOS chips to microfluidic circuits. Accordingly, this study introduces an easy, low-cost and efficient method for realizing high pressure microfluidics-to-CMOS integration. First, we report a new low temperature (280 °C) Parylene-C wafer bonding technique, where O(2) plasma-treated Parylene-C bonds directly to Si(3)N(4) with an average bonding strength of 23 MPa. The technique works for silicon wafers with a nitride surface and uses a single layer of Parylene-C deposited only on one wafer, and allows microfluidic structures to be easily formed by directly bonding to the nitride passivation layer of the CMOS devices. Exploiting this technology, we demonstrated a microfluidic chip burst pressure as high as 16 MPa, while metal electrode structures on the silicon wafer remained functional after bonding.

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“…Next, wafers were bonded at 280 ºC during 40 minutes under vacuum with a tool pressure of 1000 mbar (Suss SB6 vacuum bonder). Although parylene bonding with lower temperatures is possible [1][2][3], the selection of the temperature is done to be close (± 20 ºC) to stress-free bonding temperature of 280 ºC for silicon and Pyrex [8].…”

Section: Fabricationmentioning

confidence: 99%

“…An advantage of parylene-C is that it is depositable at room temperature, and it requires no thermal annealing and baking cycles during deposition [2][3][4][5][6][7]. In addition, low stress silicon/Pyrex wafer bonding is also possible by performing the bonding around the stress-free temperature of 270 °C [8], which is sufficiently low to be compatible with CMOS processing.…”

Section: Introductionmentioning

confidence: 99%

Low temperature Pyrex/silicon wafer bonding via a single intermediate parylene layer

Çiftlik

Gijs

2011

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

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We introduce a new low temperature (280 ºC) parylene-C wafer bonding technique, where parylene-C bonds directly a Pyrex wafer to a silicon wafer with either a Si, SiO 2 or Si 3 N 4 surface with a bonding strength up to 23 MPa. The technique uses a single layer of parylene-C deposited only on the Pyrex wafer. Moreover, the process is compatible for bonding any type of wafer with small-sized micropatterned features, or containing microfluidic channels and electrodes. This technique can be an alternative for conventional bonding methods like anodic bonding in applications requiring a low temperature and diverse bonding interfaces.

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Thermal buckling of silicon capacitive pressure sensor

Cited by 17 publications

References 4 publications

Bioinspired Material Approaches to Sensing

Bioinspired Material Approaches to Sensing

Parylene to silicon nitride bonding for post-integration of high pressure microfluidics to CMOS devices

Low temperature Pyrex/silicon wafer bonding via a single intermediate parylene layer

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