2012
DOI: 10.1063/1.3703571
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Thermal boundary resistance for gold and CoFe alloy on silicon nitride films

Abstract: Advances in microelectronics technology strongly depend on the thermal optimization of metal/ dielectric interfaces, which requires precise modeling and thermal characterization of metal/ dielectric structures. This work experimentally investigated the influence of metallic layers on the thermal boundary resistance of silicon nitride dielectric material. The results reveal that the thermal boundary resistance of silicon nitride thin films depends on the metallic layers. The thermal boundary resistance at the i… Show more

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Cited by 12 publications
(11 citation statements)
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References 25 publications
(27 reference statements)
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“…After the femtosecond laser pulse–induced locally equilibrated electron, spin, and lattice system, we described the transient thermal state of the Py disk using a simple single-temperature model in the picosecond time range ( 42 ). The relative heat capacities of the Py and silicon nitride layer were taken into account in the model, and the thermal conductivity (~25 W/mK) of the Py was taken from ( 56 ), while the thermal boundary resistance between the two layers was estimated from ( 57 ). At a laser fluence of 12 mJ/cm 2 (above the threshold), the Py disk was initially heated up to a transient peak temperature exceeding the Curie point and then the system cooled down rapidly through the local equilibration between the Py disk and the silicon nitride substrate with a cooling rate of up to ~10 12 K/s, followed by subsequent thermal diffusion through the substrate.…”
Section: Methodsmentioning
confidence: 99%
“…After the femtosecond laser pulse–induced locally equilibrated electron, spin, and lattice system, we described the transient thermal state of the Py disk using a simple single-temperature model in the picosecond time range ( 42 ). The relative heat capacities of the Py and silicon nitride layer were taken into account in the model, and the thermal conductivity (~25 W/mK) of the Py was taken from ( 56 ), while the thermal boundary resistance between the two layers was estimated from ( 57 ). At a laser fluence of 12 mJ/cm 2 (above the threshold), the Py disk was initially heated up to a transient peak temperature exceeding the Curie point and then the system cooled down rapidly through the local equilibration between the Py disk and the silicon nitride substrate with a cooling rate of up to ~10 12 K/s, followed by subsequent thermal diffusion through the substrate.…”
Section: Methodsmentioning
confidence: 99%
“…It is clear from equation (1) that decreasing the thermal resistance between thermal sensor and NW as well as contact resistances, whereas increasing the resistance to the environment, improves the sensitivity of SThM to the samples of wider thermal conductivities range. Therefore, NW and contact resistances [20,27] must be reduced as much as possible to increase the precision of the SThM measurements.…”
Section: Analytical Model Of the Sthm Probementioning
confidence: 99%
“…One of the possible solutions proposed elsewhere [4,5,20,21] suggests to use a high thermal conductivity and nanometre scale cross-section probe at the apex of the tip (e.g. nanowire (NW) or multiwall carbon nanotube (MWCNT), a particular example of NW) to act as a nanometre scale thermal link between the sensor and the sample [21,22].…”
Section: Introductionmentioning
confidence: 99%
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“…The thermal properties of the materials are taken from the literature: [31], and k tape =1.4 W/mK [32]. The thermal contact resistance between the thin films (SiN x /Si, Au/Cr/SiN x ) are on the order of 10 -8 m 2 K/W [33,34], and are insignificant compared to the resistance of the adhesive tape (∼ 10 -3 m 2 K/W) itself. The contact resistance on either side of the adhesive tape are also assumed to be negligible [35].…”
Section: Calibrationmentioning
confidence: 99%