Thermal boundary resistance at Ge2Sb2Te5/ZnS:SiO2 interface

Kim, E.-K.; Kwun, Sook‐Il; Lee, S.-M.; Seo, Hanbyul; Yoon, Jong‐Gul

doi:10.1063/1.126852

Cited by 118 publications

(69 citation statements)

References 17 publications

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“…Published experimental measurements of the thermal conductivity of Ge 2 Sb 2 Te 5 showed only a relatively small increase in thermal conductivity from low temperatures up to room temperature ͑with values 0.24 and 0.53 W/m K at room temperature for the amorphous and crystalline phases, respectively͒ and indicated phonon-dominated thermal conduction. 20 Above room temperature it might be expected that the electronic contribution could lead to significant further increases in thermal conductivity. However, the electronic contribution in Ge 2 Sb 2 Te 5 forms a relatively small part of the overall thermal conductivity, as can be estimated via the Weidemann-Franz relationship 21 using an activationtype temperature dependence of electrical conductivity.…”

Section: Temperature Gradientmentioning

confidence: 99%

A slope-theory approach to electrical probe recording on phase-change media

Aziz

Wright

2005

Journal of Applied Physics

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A theoretical approach to predicting the spatial extent of the amorphous to crystalline transition region during the probe recording process on phase-change storage media is presented. The extent of this transition region determines the ultimate achievable linear density for data storage using phase-change materials. The approach has parallels with the slope theory used to find magnetic transition lengths in magnetic recording, and shows that the amorphous to crystalline transition length can be minimized by reducing the thickness of the phase-change layer, by minimizing lateral heat flow, and by maximizing the ratio of the activation energy for crystallization to the transition temperature E c / T t .

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Section: Temperature Gradientmentioning

confidence: 99%

A slope-theory approach to electrical probe recording on phase-change media

Aziz

Wright

2005

Journal of Applied Physics

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“…This is especially the case for devices with multiple interfaces such as superlattices [2] and very large scale integrated (VLSI) circuits. Specific applications where TBR is currently being considered are thermoelectrics [3,4], thin-film high temperature superconductors [5,6], vertical cavity surface emitting lasers [7], and optical data storage media [8]. More applications are sure to follow.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Study of Thermal Boundary Resistance: Evidence of Strong Inelastic Scattering Transport Channels

Stevens

Zhigilei

2004

Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology

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With the ever-decreasing size of microelectronics, growing applications of superlattices, and development of nanotechnology, thermal resistances of interfaces are becoming increasingly central to thermal management. Although there has been much success in understanding thermal boundary resistance (TBR) at low temperature, the current models for room temperature TBR are not adequate. This work examines TBR using molecular dynamics (MD) simulations of a simple interface between two FCC solids. The simulations reveal a temperature dependence of TBR, which is an indication of inelastic scattering in the classical limit. Introduction of point defects and lattice-mismatch-induced disorder in the interface region is found to assist the energy transport across the interface. This is believed to be due to the added sites for inelastic scattering and optical phonon excitation. A simple MD experiment was conducted by directing a phonon wave packet towards the interface. Inelastic scattering, which increases transport across the interface, was directly observed. Another mechanism of energy transport through the interface involving localization of optical phonon modes at the interface was also revealed in the simulations.

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“…This makes superlattices promising materials for applications in MEMS and NEMS devices such as semiconductor lasers (Sale, 1995), optical data-storage media (Kim et al, 2000), thermoelectric (Hicks et al, 1993;Lin-Chung & Reinecke, 1993) and thermomechanic devices (Ezzahri et al, 2008). For the latter two categories the thermal-conductivity characteristics are very important to ensure the correct function of the device (Daly et al, 2002).…”

Section: Thermal Conductivity Predictions For Si/ge Superlattices Immentioning

confidence: 99%