Abstract:The electro-thermal characteristics of 1.2 kV SiC diodes are investigated in this paper. SBD and JBS diodes with different P+/N area ratio have been fabricated with Ti/Ni and Tungsten anode contact metals, which are able to work at high temperature (300ºC). Novel solutions are proposed for improving the thermal behavior of SiC JBS turn-off process, surge current and power cycling. Forward, reverse and switching characteristics are analyzed in the 25ºC-300ºC temperature range. Furthermore, to get SiC diodes abl… Show more
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