2019
DOI: 10.1016/j.apsusc.2019.05.242
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Thermal atomic layer deposition of metallic Ru using H2O as a reactant

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Cited by 20 publications
(28 citation statements)
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“…Another family of metal organics with bridge-bonded ligands used in chemical film deposition applications is diketonates. The most common ligands used in this case are the simplest acetylacetonate (acac) and hexafluoroacetylacetonate (hfac) moieties, but other diketonates with larger side chains are also known. , In many of the reported uses of these compounds the final target has been a metal oxide film, but some examples are also available for the growth of metallic films with these precursors, especially with late transition metals. , Although the studies available to date suggest that diketonates may be less reactive on surfaces than amidinates, they are still prone to fragmentation upon thermal activation.…”
Section: Resultsmentioning
confidence: 96%
“…Another family of metal organics with bridge-bonded ligands used in chemical film deposition applications is diketonates. The most common ligands used in this case are the simplest acetylacetonate (acac) and hexafluoroacetylacetonate (hfac) moieties, but other diketonates with larger side chains are also known. , In many of the reported uses of these compounds the final target has been a metal oxide film, but some examples are also available for the growth of metallic films with these precursors, especially with late transition metals. , Although the studies available to date suggest that diketonates may be less reactive on surfaces than amidinates, they are still prone to fragmentation upon thermal activation.…”
Section: Resultsmentioning
confidence: 96%
“…Figure shows the top view images of DFT-optimized adsorption structures of Carish and TMA. On the pure metallic Ru substrate, adsorption of the Carish precursor was found to occur dissociatively even without presence of H or OH on the surface, as shown in the chemical equation below: On the other hand, on oxide subrates with OH groups as in the current study, the precursor can be expected to partially lose its ligands. , The heteroleptic Carish precursor is expected to adsorb via losing CO ligands as the byproduct, retaining the diketonate ligands and forming dative bonds with OH groups ( E ads = +1.24 eV, chemical equation , Figure a). While it is also possible to form another adsorption structure, via protonation of the diketonate ligands, retention of CO, and formation of direct Ru–O bonds, such a structure is highly endothermic ( E ads = +2.39 eV, chemical equation , not shown) and, thus, ignored. For adsorption of TMA, the Al atom of TMA was adsorbed on the O atom of the surface hydroxyl (−OH). , While TMA is known to produce a mixture of −Al­(CH 3 ) and −Al­(CH 3 ) 2 upon adsorption onto the substrate surface, , in the interest of clarity in the discussion, we have assumed −Al­(CH 3 ) to be the only surface product of TMA ( E ads = −3.11 eV, chemical equation , Figure b). Then, coadsorption of Carish and TMA as in the C-T and T-C sequences is considered.…”
Section: Resultsmentioning
confidence: 57%
“…Prior to the ALM experiments, we used the Carish and TMA precursors and H 2 O as the counter reactant to investigate the growth characteristics of Ru and Al 2 O 3 in the ALD system. One Ru ALD growth cycle was composed of a Carish pulse (5 s)a N 2 purge (7 s)a H 2 O pulse (5 s)and a N 2 purge (7 s) at 283 °C . One Al 2 O 3 ALD growth cycle was composed of a TMA pulse (1 s)a N 2 purge (30 s)a H 2 O pulse (1 s)and a N 2 purge (30 s) at 283 °C.…”
Section: Methodsmentioning
confidence: 99%
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“…Fortunately, the advance of density functional theory (DFT) provides an alternative way to get that information. We , and others , have embarked in complementing studies on the mechanism of metalorganics on surfaces with this type of theoretical approach.…”
Section: Introductionmentioning
confidence: 99%