Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O

Agbenyeke, Raphael Edem; Jung, Eun‐Hee; Park, Bo Keun; Chung, Taek‐Mo; Kim, Chang Gyoun; Han, Jeong Hwan

doi:10.1016/j.apsusc.2017.05.066

Cited by 30 publications

(27 citation statements)

References 23 publications

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“…Figure 1 c displays the growth rate of ALD-In 2 O 3 thin films as a function of growth temperature using the optimized pulse conditions. Figure 1 c shows that the growth rate was directly dependent on the deposition temperature, increasing with temperature with no separate temperature window within which a constant growth rate was observed, as reported earlier with other conditions [ 23 , 24 ]. Otherwise, our results are inconsistent with the previous reports; ALD-deposited In 2 O 3 thin film with TMIn with ozone and TEIn with ozone was proposed in ALD process windows between 100 and 200 °C [ 29 , 31 ] and others [ 28 ].…”

Section: Resultssupporting

confidence: 82%

“…However, the peak intensity at lower growth temperatures was slightly higher compared to high deposition temperatures. This peak can be recognized as either surface or bulk hydroxyl–In species [ 24 , 29 , 38 ], perhaps originated from the incomplete formation of In 2 O 3 lattice or the unreacted precursor molecules embedded into the film surface. The C1 s core XPS spectra of the deposited films were examined and shown in Figure 5 d. The C1 s peaks were present in all the deposited temperatures, although it was slightly observed at the higher growth temperature present in all films and hard to glide by the ALD reaction process due to steric effect [ 23 , 28 , 29 ].…”

Section: Resultsmentioning

confidence: 99%

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Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

et al. 2021

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Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results confirmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

et al. 2021

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“…There is a seeming paradox between the variation trends of the oxygen vacancy concentration and the total O-content. In fact, they are unnecessarily related to each other since the oxygen atoms may exist as lattice oxygen, oxygen interstitials (O i ) or OH ligands with binding energies located at 529.8, 532.4 and 531.9 eV, respectively [ 24 , 25 ]. Although the (O i ) or OH components cannot be distinguished from the O1s peak, there are still possibilities that more oxygen atoms may exist as oxygen interstitials or OH ligands in the film when deposited at a relatively low substrate temperature due to the low ratio of chemically adsorbed precursors.…”

Section: Resultsmentioning

confidence: 99%

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

et al. 2021

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Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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“…According to the recent reports, heteroleptic metal precursors exhibit better thermal stability and higher growth rates than those of homoleptic ones [20] . Moreover, our group recently reported the deposition of high‐quality In 2 O 3 thin films by ALD using indium metal precursors having N ‐alkoxy carboxamide ligand, especially [Me 2 In(edpa)] 2 [21] . In this study, new heteroleptic indium complexes bearing methyl, N ‐alkoxy carboxamide, and β‐diketonate ligands were synthesized.…”

Section: Introductionmentioning

confidence: 98%

“…[20] Moreover, our group recently reported the deposition of high-quality In 2 O 3 thin films by ALD using indium metal precursors having N-alkoxy carboxamide ligand, especially [Me 2 In(edpa)] 2 . [21] In this study, new heteroleptic indium complexes bearing methyl, N-alkoxy carboxamide, and β-diketonate ligands were synthesized. As shown in Scheme 1, the N-alkoxy carboxamide ligands used were Nethoxy-2,2-dimethyl propanamide (edpaH) and N-methoxy-2,2dimethyl propanamide (mdpaH), whereas 2,2,6,6-tetramethylheptan-3,5-dione (tmhdH) and acetylacetone (acacH) were used as the β-diketonate ligands.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

et al. 2021

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New heteroleptic indium complexes, i. e., [MeIn(mdpa)(tmhd)] 2 (2), [MeIn(mdpa)(acac)] 2 (3), [MeIn(edpa)(tmhd)] 2 (4), and [MeIn (edpa)(acac)] 2 (5), with three different ligands, bearing N-alkoxy carboxamide and β-diketonate were designed and synthesized as indium precursors for indium oxide thin films by atomic layer deposition (ALD) using [Me 2 In(edpa)] 2 and [Me 2 In(mdpa)] 2 (1) as starting materials. The resulting complexes were characterized by NMR and FT-IR spectroscopy, elemental analysis (EA), thermogravimetric analysis (TGA), and single crystal X-ray diffraction. TGA curves of all the complexes showed clear single-step weight losses, with low residual masses of 7-13 %. Among them, complex 5 was volatile and thermally stable, and thus, it can be used as potential indium precursor for indium oxide-based thin films.

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Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O

Cited by 30 publications

References 23 publications

Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

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