Thermal annealing of sequentially deposited SnS thin films

Safonova, M. N.; Nair, P. K.; Mellikov, E.; Aragón, R.; Kerm, Karin; Naidu, Revathi; Mikli, Valdek; Volobujeva, Olga

doi:10.3176/proc.2015.4.04

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…The relative concentrations of Sn and S on the samples were evaluated as given in table 3.1 and by the EDS spectrum. The value obtained shows that the TC value of (040) plane of annealed SnS semiconductor channel layer component are larger than 1 which reveals that the SnS thin film is polycrystalline with preferred orientation along the (040) plane denoting that the number of crystallite and grains along this plane is more than that on the other planes [14,15,17]. The peak associated with the (040) plane was used to calculate the crystallite size and other structural parameters been the preferred orientation of the annealed SnS thin film.…”

Section: Results and Discussion Compositional Analysis Of The Annealementioning

confidence: 95%

Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Daniel

Uno

Isah

et al. 2019

EEJP

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The study aimed at the investigation and application of SnS thin film semiconductor as a channel layer semiconductor in the assembly of an electric double layer field effect transistor which is important for the achievement and development of novel device concepts, applications and tuning of physical properties of materials since the reported EDLFET and the modulation of electronic states have so far been realised on oxides, nitrides, carbon nanotubes and organic semiconductor but has been rarely reported for the chalcogenides. Honey was used as a gel like electrolytic gate dielectric to generate an enhanced electric field response over SnS semiconductor channel layer and due to its ability to produces high on-current and low voltage operation while forming an ionic gel-like solution similar to ionic gels which consist of ionic liguids. SnS gated honey Electric double layer field effect transistor was assembled using tin sulphide (SnS) thin film as semiconductor channel layer and honey as gate dielectric. The measured gate capacitance of honey using LCR meter was measured as 2.15 μF/ cm2 while the dielectric constant is 20.50. The semiconductor layer was deposited using Aerosol assisted chemical vapour deposition and annealed in open air at 250 on an etched region about the middle of a 4×4 mm FTO glass substrate with the source and drain electrode region defined by the etching and masking at the two ends of the substrate. Iridium was used as the gate electrode while a copper wire was masked to the source and drain region to create electrode contact. The Profilometry, X-ray diffraction, Scanning electron microscope, Energy dispersive X-ray spectroscopy, Hall Effect measurement and digital multimeters were used to characterise the device. The SnS thin film was found to be polycrystalline consisting of Sn and S elements with define grains, an optical band of 1.42 eV and of 0.4 μm thickness. The transistor operated with a p type channel conductivity in a depletion mode with a field effect mobility of 16.67 cm2/Vs, cut-off voltage of 1.6 V, Drain saturation current of1.35μA, a transconductance of -809.61 nA/V and a sub threshold slope of -1.6 Vdec-1 which is comparable to standard specifications in Electronics Data sheets. Positive gate bias results in a shift in the cut off voltage due to charge trapping in the channel/dielectric interface.

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Section: Results and Discussion Compositional Analysis Of The Annealementioning

confidence: 95%

Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Daniel

Uno

Isah

et al. 2019

EEJP

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show abstract

“…The calculated texture coefficient values of the five samples is given in table 3. The value obtained shows that all the TC values of (040) plane of SnS thin film component are larger than 1 which indicates that all the SnS films are polycrystalline with preferred orientation along the (040) plane which denotes that the number of grains along this plane is more than that on the other planes [12], [13], [17] and the degree of preferential orientation (DPO) increased with increase in thickness.…”

Section: Texture Coefficientmentioning

confidence: 99%

Structural and microstructural study of SnS thin film semiconductor of 0.2<tâ‰¤ 0.4 Î¼m thickness for application in a field effect transistor

Daniel

Uno

Isah³

et al. 2019

IJPR

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SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consisting of Sn and S elements whose composition varied with increase in thickness. The SnS film of 0.4 μm thickness shows a more uniform grain distribution and growth with a crystal size of 60.57 nm and grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density hence allowing charge carriers to move freely in the lattice thereby causing a reduction in resistivity, increase in conductivity of the films and enhanced energy band gap which are essentially parameters for a semiconductor material for application in a field effect transistor.

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“…It is clear that the absorption coefficient exhibits higher values within the range of 10 4 cm -1 , these values means that there is a large probability of the allowed direct transition. The optical band gap (E g ) of Cu 2 SiO 3 films has been determined from the optical absorption coefficient and photon energy (hυ) data assuming the direct transmission occurs between valance and conduction band using Tauc's relation [12].…”

Section: Fig 3: 2d and 3d Images For As Deposited Cu 2 Sio 3 Thin Fimentioning

confidence: 99%

Study the effect of thermal annealing on some physical properties of thin Cu2SiO3 films prepared by pulsed laser deposition

Naji¹

2018

IJP

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The Cu2SiO3 composite has been prepared from the binary compounds (Cu2O, and SiO2) with high purity by solid state reaction. The Cu2SiO3 thin films were deposited at room temperature on glass and Si substrates with thickness 400 nm by pulsed laser deposition method. X-ray analysis showed that the powder of Cu2SiO3 has a polycrystalline structure with monoclinic phase and preferred orientation along (111) direction at 2θ around 38.670o which related to CuO phase. While as deposited and annealed Cu2SiO3 films have amorphous structure. The morphological study revealed that the grains have granular and elliptical shape, with average diameter of 163.63 nm. The electrical properties which represent Hall effect were investigated. Hall coefficient is negative which means that the films are n-type, and the electrical conductivity decreases with heat treatment.The sensing properties of the Cu2SiO3 sensors for NO2 gas have been studied, and the result revealed that the Cu2SiO3 films have low sensitivity at room temperature, and it's improve with increasing the operation temperature. The response time increase while the recovery time decrease with increasing operation temperature.

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Thermal annealing of sequentially deposited SnS thin films

Cited by 5 publications

References 19 publications

Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Structural and microstructural study of SnS thin film semiconductor of 0.2<tâ‰¤ 0.4 Î¼m thickness for application in a field effect transistor

Study the effect of thermal annealing on some physical properties of thin Cu2SiO3 films prepared by pulsed laser deposition

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